EDB101 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION EDB106 GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * * Good for automatic insertion Surge overloading rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram DB-1 .255 (6.5) .245 (6.2) MECHANICAL DATA * UL listed the recognized component directory, file #94233 * Epoxy: Device has UL flammability classification 94V-O .350 (8.9) .300 (7.6) .335 (8.51) .320 (8.12) .135 (3.4) .115 (2.9) .165 (4.2) .155 (3.9) .020 (0.5) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. .060 (1.5) .205 (5.2) .195 (5.0) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL EDB101 EDB102 EDB103 EDB104 EDB105 EDB106 UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 50 100 150 200 300 400 Volts Maximum RMS Volts VRMS 35 70 105 140 210 280 Volts VDC 50 100 150 200 300 400 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC IO Peak Forward Surge Current IFM (surge):8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) 1.0 30 I FSM CJ Operating and Storage Temperature Range Amps 15 T J , T STG Amps 10 pF 0 -65 to + 150 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL VF Maximum DC Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A =150 o C Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. IR EDB101 EDB102 EDB103 1.0 EDB104 EDB105 EDB106 1.25 UNITS Volts 5.0 uAmps 50 trr 50 nSec 2001-5 RATING AND CHARACTERISTIC CURVES ( EDB101 THRU EDB106 ) trr +0.5A (-) 0 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A 1cm NOTES:1 Rise Time = 7ns max. Input Impedance = SET TIME BASE FOR 10 ns/cm 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 1.0 TJ = 25 .1 .01 1.0 .1 Pulse Width = 300uS 1% Duty Cycle .01 .001 0 20 40 60 80 100 120 0 140 JUNCTION CAPACITANCE, (pF) 30 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5 0 .4 .6 .8 1.0 1.2 1.4 FIG. 6 - TYPICAL JUNCTION CAPACITANCE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 35 .2 INSTANTANEOUS FORWARD VOLTAGE, (V) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) TJ = 25 F14 TJ = 100 ) 10 1~S TJ = 150 10 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( SF1 100 0 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 1.0 16 (NOTE 2) -0.25A Single Phase Half Wave 60Hz Resistive or Inductive Load SF PULSE GENERATOR 2.0 15~ D.U.T (+) 25 Vdc (approx) (-) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE SF 10 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 200 100 60 40 20 EDB10 1~EDB 10 TJ = 25 6 4 104 EDB105~ EDB106 2 1 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) RECTRON 100