UFM104

UFM101
RECTRON
THRU
SEMICONDUCTOR
TECHNICAL SPECIFICATION
UFM104
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 200 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
Glass passivated device
For surface mounted applications
Ultrafast recovery times for high efficiency
Low forward voltage, low power loss
Low leakage current
DO-214AC
MECHANICAL DATA
0.067 (1.70)
0.051 (1.29)
* Epoxy : Device has UL flammability classification 94V-0
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram
0.110 (2.79)
0.086 (2.18)
0.180(4.57)
0.160(4.06)
0.012 (0.305)
0.006 (0.152)
0.091 (2.31)
0.067 (1.70)
0.059 (1.50)
0.035 (0.89)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
SYMBOL
UFM101
UFM102
UFM103
UFM104
UNITS
Maximum Recurrent Peak Reverse Voltage
RATINGS
VRRM
50
100
150
200
Volts
Maximum RMS Volts
VRMS
35
70
105
140
Volts
VDC
50
100
150
200
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T A = 55 oC
Peak Forward Surge Current I FM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
IO
1.0
Amps
I FSM
30
Amps
CJ
7
T J , T STG
-55 to + 150
pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
VF
Maximum DC Reverse Current
@T A = 25 oC
at Rated DC Blocking Voltage
@T A =100 o C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF=0.5A, I R=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
IR
UFM101
UFM102
UFM103
0.92
UFM104
UNITS
Volts
5.0
uAmps
100
trr
20
nSec
2002-1
RATING AND CHARACTERISTIC CURVES ( UFM101 THRU UFM104 )
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
10
NON-INDUCTIVE
trr
+0.5A
(+)
25 Vdc
(approx)
(-)
(-)
D.U.T
0
PULSE
GENERATOR
(NOTE 2)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-0.25A
(+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1cm
SET TIME BASE FOR
5/10 ns/cm
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
TJ = 150
10
TJ = 100
1.0
TJ = 25
.1
.01
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE (
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
10
TJ = 25
1
Pulse Width = 300uS
1% Duty Cycle
.1
.01
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
.4
.6
.8
1.0 1.2 1.4
1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
70
60
50
40
TJ = 25
30
20
10
0
JUNCTION CAPACITANCE, (pF)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
200
100
60
40
20
TJ = 25
10
6
4
2
1
.1
.5 1 2
5 10 20 50 100 200 400
NUMBER OF CYCLES AT 60Hz
.1
.2
.4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
)
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
Dimensions in inches and (millimeters)
RECTRON