EDB101S RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION EDB106S GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Surge overloading rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 1.0 gram DB-S MECHANICAL DATA .310 (7.9) .290 (7.4) * Epoxy : Device has UL flammability classification 94V-0 .255 (6.5) .245 (6.2) .013 (.330) .003 (.076) .410 (10.4) .360 (9.4) .042 (1.1) .038 (1.0) .009 (9.4) .060 (1.524) .040 (1.016) .335 (8.51) .320 (8.13) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature unless otherwise specified. .135 (3.4) .115 (2.9) Single phase, half wave, 60 Hz, resistive or inductive load. .205 (5.2) .195 (5.0) For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS SYMBOL EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 Volts Maximum RMS Volts VRMS 35 70 105 140 210 280 Volts VDC 50 100 150 200 300 400 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC IO Peak Forward Surge Current I FM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) T J , T STG Amps 30 I FSM CJ Operating and Storage Temperature Range 1.0 15 Amps 10 -65 to + 150 pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL VF Maximum DC Reverse Current @T A = 25 oC at Rated DC Blocking Voltage @T A =150 o C Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. IR EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S 1.0 1.25 UNITS Volts 5.0 uAmps 50 trr 50 nSec 2001-4 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (-) (+) -1.0A 1cm SET TIME BASE FOR 10 ns/cm TJ = 25 .01 4S B10 ED 1.0 .1 1S~ TJ = 100 1.0 B10 TJ = 150 10 10 ED 100 .1 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS TJ = 25 Pulse Width = 300uS 1% Duty Cycle .01 .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150175 AMBIENT TEMPERATURE ( S 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 06 NOTES:1 Rise Time = 7ns max. Input Impedance = B1 OSCILLOSCOPE (NOTE 1) 1.0 ED 1 NONINDUCTIVE 0 -0.25A Single Phase Half Wave 60Hz Resistive or Inductive Load S~ PULSE GENERATOR (NOTE 2) 2.0 05 D.U.T (+) 25 Vdc (approx) (-) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE B1 10 NONINDUCTIVE ED 50 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( EDB101S THRU EDB106S ) 0 FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 25 20 8.3ms Single Half Sine-Wave (JEDED Method) 15 FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) 35 10 5 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) 200 100 60 40 20 10 6 TJ = 25 4 2 1 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) RECTRON 100 )