EFM201A RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION EFM207A SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram DO-214AC MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 0.067 (1.70) 0.051 (1.29) 0.110 (2.79) 0.086 (2.18) 0.180(4.57) 0.160(4.06) 0.012 (0.305) 0.006 (0.152) 0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 0.008 (0.203) 0.004 (0.102) 0.209 (5.31) 0.185 (4.70) For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS SYMBOL EFM201A EFM202A EFM203A EFM204A EFM205A EFM206A EFM207A UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Volts V RMS 35 70 105 140 210 280 420 Volts VDC 50 100 150 200 300 400 600 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC Operating and Storage Temperature Range CJ T J , T STG Amps 75 I FSM Typical Junction Capacitance (Note 2) Amps 2.0 IO Peak Forward Surge Current I FM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 30 pF 20 0 -55 to + 150 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 2.0A DC Maximum DC Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A =150 o C SYMBOL VF Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. EFM201A EFM202A EFM203A EFM204A EFM205A EFM206A EFM207A 0.95 1.25 1.70 5.0 IR UNITS Volts uAmps 50 trr 35 50 nSec 2003-3 AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( EFM201A THRU EFM207A ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (-) (+) -1.0A 1cm 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 10 1.0 TJ = 25 06 M2 A EF 204 FM A ~E 01A TJ = 100 1.0 M2 10 EF TJ = 150 A INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) 100 .01 .1 TJ = 25 .01 Pulse Width = 300uS 1% Duty Cycle .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) 0 JUNCTION CAPACITANCE, (pF) 105 90 8.3ms Single Half Sine-Wave (JEDEC Method) 75 60 45 30 15 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150175 AMBIENT TEMPERATURE ( FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 3 - TYPICAL REVERSE CHARACTERISTICS .1 0 SET TIME BASE FOR 10 ns/cm 07 NOTES:1 Rise Time = 7ns max. Input Impedance = Single Phase Half Wave 60Hz Resistive or Inductive Load 1.0 A~ OSCILLOSCOPE (NOTE 1) -0.25A 2.0 M2 1 NONINDUCTIVE 0 05 25 Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 3.0 EF D.U.T (+) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE M2 10 NONINDUCTIVE EF 50 NONINDUCTIVE 200 100 60 40 EFM 201 20 A~E FM EFM 10 6 4 205 TJ = 25 204 A A~E FM2 07A 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON ) Mounting Pad Layout 0.094 MAX. (2.38 MAX.) 0.060 MIN. (1.52 MIN.) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF Dimensions in inches and (millimeters) RECTRON