RS1001M RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RS1007M SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes FEATURES Low leakage Low forward voltage Mounting position: Any Surge overload rating: 200 amperes peak Silver-plated copper leads RS-10M .098 (2.5) .146 .130 .708 .669 .074 (1.9) .059 (1.5) (3.7) (3.3) (18.0) (17.0) .114 (2.9) .043 (1.1) .035 (0.9) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .189 (4.8) .173 (4.4) .150 (3.8) .134 (3.4) .122 (3.1) .157 (4) .057 (1.45) .041 (1.05) .083 (2.1) .069 (1.7) .602 (15.3) .578 (14.7) .995 (25.3) .983 (24.7) .366 (9.3) * UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O .382 (9.7) MECHANICAL DATA f.134 (3.4) * * * * * .031 (0.8) .023 (0.6) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. .303 (7.7) .287 (7.3) For capacitive load, derate current by 20%. .303 (7.7) .287 (7.3) .303 (7.7) .287 (7.3) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS SYMBOL RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Rectified Output Current at Tc = 100o C with heatsink Peak Forward Surge Current 8.3 ms single half sine-wave IO 10 Amps I FSM 200 Amps T J, T STG -55 to + 150 superimposed on rated load Operating and Storage Temperature Range 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage Drop per element at 5.0A DC Maximum Reverse Current at Rated @T A = 25 oC DC Blocking Voltage per element @T C = 100 oC VF RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS 1.1 Volts 10 uAmps 0.2 mAmps IR 2001-5 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS POWER DISSIPATION 34 30 20 10 5 2 TC = 150 (TYP) TC = 25 (TYP) 1 0.5 0.2 sine wave Tj=150 30 POWER DISSIPATION PF(W) INSTANTANEOUS FORWARD CURRENT, (A) RATING AND CHARACTERISTIC CURVES (RS1001M THRU RS1007M) 20 10 pulse test per one diode 0.1 0.4 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE, (V) 0 AVERAGE FORWARD CURRENT, (A) IFSM PEAK FORWARD SURGE CURRENT, (A) sine wave 180 0 8.3ms 8.3ms 160 1 cycle non-repetitive Tj=25 140 120 100 80 60 1 2 5 10 20 NUMBER OF CYCLE 50 sine wave R-load on heatsink 6 4 2 100 110 120 130 140 150 160 CASE TEMPERATURE, ( ) 14 sine wave R-load free in air 1 40 80 120 160 ) CONTACT THERMAL RESISTANCE fcf /W ) 8 12 P.C.B 2 1.6 THERMAL RESISTANCE ( AVERAGE FORWARD CURRENT, (A) 10 on glass-epoxi substrate with thermal compound heatsink Tc Tc 90 8 AMBIENT TEMPERATURE, ( 10 0 80 6 3 0 0 100 TYPICAL FORWARD CURRENT DERATING CURVE 12 4 TYPICAL FORWARD CURRENT DERATING CURVE SURGE FORWARD CURRENT CAPABILITY 200 2 AVERAGE RECTIFIED FORWARD CURRENT, Io (A) 1.5 1.4 1.3 1.2 1.1 1 2 3 4 5 6 7 MOUNTING TORQUE (Kg.cm) RECTRON 8