RECTRON RS1006M

RS1001M
RECTRON
THRU
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS1007M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes
FEATURES
Low leakage
Low forward voltage
Mounting position: Any
Surge overload rating: 200 amperes peak
Silver-plated copper leads
RS-10M
.098 (2.5)
.146
.130
.708
.669
.074 (1.9)
.059 (1.5)
(3.7)
(3.3)
(18.0)
(17.0)
.114 (2.9)
.043 (1.1)
.035 (0.9)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.189 (4.8)
.173 (4.4)
.150 (3.8)
.134 (3.4)
.122 (3.1)
.157 (4)
.057 (1.45)
.041 (1.05)
.083 (2.1)
.069 (1.7)
.602 (15.3)
.578 (14.7)
.995 (25.3)
.983 (24.7)
.366 (9.3)
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
.382 (9.7)
MECHANICAL DATA
f.134 (3.4)
*
*
*
*
*
.031 (0.8)
.023 (0.6)
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
.303 (7.7)
.287 (7.3)
For capacitive load, derate current by 20%.
.303 (7.7)
.287 (7.3)
.303 (7.7)
.287 (7.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted)
RATINGS
SYMBOL
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Bridge Input Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Rectified Output Current at Tc = 100o C
with heatsink
Peak Forward Surge Current 8.3 ms single half sine-wave
IO
10
Amps
I FSM
200
Amps
T J, T STG
-55 to + 150
superimposed on rated load
Operating and Storage Temperature Range
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage Drop per element at 5.0A DC
Maximum Reverse Current at Rated
@T A = 25 oC
DC Blocking Voltage per element
@T C = 100 oC
VF
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS
1.1
Volts
10
uAmps
0.2
mAmps
IR
2001-5
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
POWER DISSIPATION
34
30
20
10
5
2
TC = 150
(TYP)
TC = 25
(TYP)
1
0.5
0.2
sine wave
Tj=150
30
POWER DISSIPATION PF(W)
INSTANTANEOUS FORWARD CURRENT, (A)
RATING AND CHARACTERISTIC CURVES (RS1001M THRU RS1007M)
20
10
pulse test
per one diode
0.1
0.4
0
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
0
AVERAGE FORWARD CURRENT, (A)
IFSM
PEAK FORWARD SURGE CURRENT, (A)
sine wave
180
0
8.3ms 8.3ms
160
1 cycle
non-repetitive
Tj=25
140
120
100
80
60
1
2
5
10
20
NUMBER OF CYCLE
50
sine wave
R-load
on heatsink
6
4
2
100 110 120 130 140 150 160
CASE TEMPERATURE, (
)
14
sine wave
R-load
free in air
1
40
80
120
160
)
CONTACT THERMAL RESISTANCE fcf
/W )
8
12
P.C.B
2
1.6
THERMAL RESISTANCE (
AVERAGE FORWARD CURRENT, (A)
10
on glass-epoxi substrate
with thermal compound
heatsink
Tc
Tc
90
8
AMBIENT TEMPERATURE, (
10
0
80
6
3
0
0
100
TYPICAL FORWARD CURRENT
DERATING CURVE
12
4
TYPICAL FORWARD CURRENT
DERATING CURVE
SURGE FORWARD CURRENT CAPABILITY
200
2
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
1.5
1.4
1.3
1.2
1.1
1
2
3
4
5
6
7
MOUNTING TORQUE (Kg.cm)
RECTRON
8