RF2137 2 LINEAR POWER AMPLIFIER Typical Applications • 4.8V AMPS Cellular Handsets • Driver Amplifier in Cellular Base Stations • 4.8V CDMA/AMPS Handsets • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS • 4.8V JCDMA/TACS Handsets Product Description The RF2137 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics at all recommended supply voltages. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 3.90 ± 0.10 -A0.43 ± 0.05 Exposed Heat Sink 0.05 ± 0.05 2.70 ± 0.10 4.90 ± 0.10 1.27 6.00 ± 0.20 1.40 ± 0.10 Dimensions in mm. 8° MAX 0° MIN 0.22 ± 0.03 0.60 ± 0.15 1.70 ± 0.10 NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A". Package Style: SOIC-8 Slug Features • Single 4.2V to 6.0V Supply • Up to 29 dBm Linear Output Power • 27dB Gain With Analog Gain Control • 45% Linear Efficiency VCC 1 8 RF OUT • On-board Power Down Mode RF IN 2 7 RF OUT • 800MHz to 950MHz Operation GND 3 6 RF OUT PC 4 BIAS 5 RF OUT PACKAGE BASE GND Functional Block Diagram Rev B2 010720 Ordering Information RF2137 RF2137 PCBA Linear Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-115 RF2137 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage (No RF) Supply Voltage (POUT<31dBm) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Parameter Rating Unit -0.5 to +8.0 -0.5 to +6.0 -0.5 to +6.0 or VCC 800 +12 10:1 -30 to +90 -40 to +150 VDC VDC V mA dBm Typ. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). °C °C Specification Min. Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Max. Unit T=25 °C, VCC =5.0 V, VPC =3.6V, Freq=824MHz to 849MHz Overall Usable Frequency Range Linear Gain Total Linear Efficiency Efficiency at Max Output OFF Isolation Second Harmonic Maximum Linear Output Power Adjacent Channel Power @ 885kHz offset Adjacent Channel Power @ 1.98MHz offset Max CW Output Power Input VSWR Output Load VSWR Condition 800 25 40 50 31.5 824 to 849 27 45 55 27 -30 28.5 -46 950 29 29 -44 MHz dB % % dB dBc dBm dBc -58 -56 dBc +32.0 <2:1 VPC =0V,PIN =+6dBm Including Second Harmonic Trap IS-95A CDMA Modulation Pout = 28 dBm ACPR can be improved by trading off efficiency. Pout = 28 dBm dBm 10:1 No oscillations Power Down Turn On/Off Time Total Current VPC “OFF” Voltage VPC “ON” Voltage 0.2 3.6 100 10 0.5 Vcc ns µA V V 6.0 100 20 V mA mA “OFF” State Threshold Voltage at Input Threshold Voltage at Input Power Supply Power Supply Voltage Idle Current Current into VPC pin 2-116 4.2 5.0 40 15 Operating voltage VPC =4.0V Rev B2 010720 RF2137 Function VCC 2 RF IN 3 GND 4 PC 5 RF OUT 6 7 8 Pkg Base RF OUT RF OUT RF OUT GND Description Interface Schematic Power supply for the driver stage, and interstage matching. Shunt inductance is required on this pin, which can be achieved by an inductor to VCC, with a decoupling capacitor on the VCC side. The value of the inductor is frequency dependent; 3.3nH is required for 830MHz, and 1.2nH for 950MHz. Instead of an inductor, a high impedance microstrip line can be used. RF input. This is a 50Ω input, but the actual input impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Power Control. When this pin is "low", all circuits are shut off. A "low" is typically 0.5V or less at room temperature. During normal operation this pin is the power control. Control range varies from about 2V for 0dBm to VCC for +31dBm RF output power. The maximum power that can be achieved depends on the actual output matching. PC should never exceed 6.0V or VCC, whichever is lowest. VCC RF IN From Bias Stages 2 See pin 1. PC To RF Transistors RF Output and power supply for the output stage. The three output pins are combined, and bias voltage for the final stage is provided through these pins. The external path must be kept symmetric until combined to ensure stability. An external matching network is required to provide the optimum load impedance; see the application schematics for details. RF OUT From Bias Stages Same as pin 5. See pin 5. Same as pin 5. See pin 5. Same as pin 5. See pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 VCC C8 3.3 µF C9 1 nF C5 100 pF L1 1.8 nH L2 4.7 nH C6 100 pF 2137400A RF IN J1 50 Ω µstrip C3 100 pF R1 10 kΩ P1-1 P1-3 1 8 2 7 3 6 L3 1.5 nH C4 100 pF C1 1.5 pF C2 7.5 pF 1 VCC 2 GND 3 PC 50 Ω µstrip RF OUT J2 PC C7 1 nF 4 BIAS 5 PACKAGE BASE Rev B2 010720 2-117 POWER AMPLIFIERS Pin 1 RF2137 Evaluation Board Layout 1.559" X 1.191" POWER AMPLIFIERS 2 2-118 Rev B2 010720