SANKEN 2SA1860

2SA1860
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886)
VCB=–150V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
IC=–25mA
–150min
V
VCE(sat)
W
fT
150
°C
COB
–55 to +150
°C
Tstg
IC=–5A, IB=–500mA
–2.0max
V
VCE=–12V, IE=2A
50typ
MHz
VCB=–10V, f=1MHz
400typ
pF
3.0
A
80(Tc=25°C)
3.3
–3
PC
ø3.3±0.2
a
b
1.75
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–60
12
–5
–10
5
–500
500
0.25typ
0.85typ
0.2typ
I B =–20mA
0
–1
–2
–3
–4
0
0
–0.2
–0.4
–0.6
–0.8
(V C E =–4V)
200
200
–1
–5
Transient Thermal Resistance
DC Cur rent Gain h FE
Typ
50
25˚C
100
–30˚C
50
30
–0.02
–10 –14
–0.1
p)
Tem
–1
–0.5
f T – I E Characteristics (Typical)
–2
–1
–5
θ j-a – t Characteristics
–10 –14
3
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
80
–40
10
–10
si
nk
Collect or Cur ren t I C (A)
40
at
Without Heatsink
Natural Cooling
he
–0.5
ite
–1
60
fin
20
s
–5
In
40
C
s
s
ith
Typ
m
W
D
60
10
0m
1m
M aximum Power Dissipa ti on P C (W)
80
Cu t-off Fre quen cy f T (M H Z )
DC Cur rent Gain h FE
125˚C
–0.5
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
–0.1
0
–1.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
20
–0.02
se
–5A
Collector-Emitter Voltage V C E (V)
100
–5
I C =–10A
θ j- a ( ˚C/W)
0
–1
(Ca
–50mA
–5
–10
25˚
–100 mA
–2
˚C
–1 50 m A
–10
E
(V C E =–4V)
125
mA
C
3.35
Weight : Approx 6.5g
a. Type No.
b. Lot No.
–14
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s at) (V )
00
–7
Collector Current I C (A)
–200
1.5
I C – V BE Temperature Characteristics (Typical)
–3
A
m mA
mA
mA
00 500 400
00
–
–3
–6 –
mA
–14
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
I C – V CE Characteristics (Typical)
0.8
2.15
)
IB
Tj
50min∗
VCE=–4V, IC=–5A
emp
hFE
eT
V(BR)CEO
A
Cas
V
–14
3.45 ±0.2
˚C (
–5
IC
p)
VEBO
5.5±0.2
–30
–150
Tem
VCEO
15.6±0.2
ase
V
C (C
–150
0.8±0.2
ICBO
VCBO
5.5
Unit
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
2SA1860
Unit
1.6
■Electrical Characteristics
Conditions
2SA1860
23.0±0.3
Symbol
9.5±0.2
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
16.2
LAPT
20
–0.1
0
0.02
0.1
1
Emitter Current I E (A)
34
10
–0.05
–2
Without Heatsink
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150