2SA1492 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) –100max µA V IEBO VEB=–6V –100max µA IC=–50mA –180min V V V(BR)CEO –15 A hFE VCE=–4V, IC=–3A 50min∗ –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 130(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ I B =–20mA 0 0 –1 –2 –3 –1 I C =–10A 0 –4 0 –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 100 50 125˚C 25˚C 100 –30˚C 50 20 –0.02 –5 –10 –15 f T – I E Characteristics (Typical) –0.1 –0.5 –1 10 0.1 1 10 P c – T a Derating s C –100 Collector-Emitter Voltage V C E (V) –200 nk –10 si –0.1 –3 Without Heatsink Natural Cooling at –0.5 he –1 100 ite Collector Cur rent I C (A) –5 0m s s fin 10 D m In 10 1000 2000 ith 20 100 Time t(ms) W –10 Typ 20 0.5 M aximum Power Dissipa ti on P C ( W) 3m Emitter Current I E (A) –10 –15 1 130 10 1 –5 3 –40 30 –2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =–12V) 0.1 –1 Collector Current I C (A) Collector Current I C (A) 0 0.02 Transient Thermal Resistance DC Curr ent Gain h FE Typ Cut- off F re quen cy f T (MH Z ) DC Curr ent Gain h FE 300 –1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –5 –5A Collector-Emitter Voltage V C E (V) 10 –0.02 mp) Temp ) –50mA –5 –10 e Te –0 .1 A –2 Cas A ˚C ( – 0 .2 –10 125 4A (V C E =–4V) –15 – 3 θ j - a (˚C/W) –0. 1.4 E I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 6A C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) –1 A –0. 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –15 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.2±0.1 b IB Tstg a 2.0±0.1 Temp) –6 IC 4.8±0.2 (Case VEBO 15.6±0.4 9.6 1.8 VCB=–180V 5.0±0.2 ICBO 19.9±0.3 V –30˚C –180 Unit (Case VCEO Ratings 25˚C –180 Conditions 2.0 VCBO External Dimensions MT-100(TO3P) (Ta=25°C) Symbol 4.0 Unit 4.0max ■Electrical Characteristics (Ta=25°C) Ratings Symbol 20.0min ■Absolute maximum ratings Application : Audio and General Purpose 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150