2SA1693

2SA1693
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4466)
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
–6
V
V(BR)CEO
IC=–50mA
–80min
V
–6
A
hFE
50min∗
VCE=–4V, IC=–2A
A
VCE(sat)
IC=–2A, IB=–0.2A
–1.5max
V
60(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
150typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
20.0min
–3
PC
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–30
10
–3
–10
5
–0.3
0.3
0.18typ
1.10typ
0.21typ
–20mA
–2
I B =–10mA
0
0
–1
–2
–3
–4
–1
–4A
–2A
0
0
–0.5
–1.0
(V C E =–4V)
300
100
50
125˚C
Transient Thermal Resistance
DC Cur rent Gain h FE
Typ
25˚C
–30˚C
100
50
30
–0.02
–5 –6
–0.1
Collector Current I C (A)
–0.5
–2
–1
–5 –6
5
1
0.5
0.3
1
10
Collector Current I C (A)
f T – I E Characteristics (Typical)
100
1000 2000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
60
10
–10
Typ
ite
he
at
si
nk
Collector Curr ent I C (A)
fin
Without Heatsink
Natural Cooling
40
In
–1
–0.5
ith
DC
W
10
s
100ms
–5
20
m
M aximum Power Dissipa ti on P C ( W)
–20
30
Cut -off Fre quen cy f T (M H Z )
DC Curr ent Gain h FE
–1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
300
–1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–1.5
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
–2
I C =–6A
Collector-Emitter Voltage V C E (V)
30
–0.02
–4
)
–30mA
–2
e Te
mp)
e Te
mp)
–50mA
Cas
–4
˚C (
–8 0m A
125
–1
00 m A
(V C E =–4V)
–6
–3
mA
Collector Current I C (A)
–
0
15
1.4
E
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚ C/W)
0
A
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
–2
0m
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
–6
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.2±0.1
b
IB
Tstg
a
Temp
IC
2.0±0.1
(Case
VEBO
4.8±0.2
–30˚C
–80
(Cas
VCEO
15.6±0.4
9.6
25˚C
V
1.8
VCB=–80V
–80
5.0±0.2
ICBO
VCBO
2.0
Unit
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
Ratings
Unit
4.0
■Electrical Characteristics
Conditions
Ratings
19.9±0.3
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20
Without Heatsink
0
0.02
0.05 0.1
0.5
1
Emitter Current I E (A)
5 6
–0.1
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
27