SANKEN 2SB1570

(7 0 Ω ) E
2SB1570
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)
Symbol
ICBO
2SB1570
Unit
–100max
µA
24.4±0.2
VEB=–5V
–100max
µA
–150min
V
hFE
VCE=–4V, IC=–7A
5000min∗
VCE(sat)
IC=–7A, IB=–7mA
–2.5max
V
W
VBE(sat)
IC=–7A, IB=–7mA
–3.0max
V
150
°C
fT
VCE=–12V, IE=2A
50typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
230typ
pF
IC
–12
A
IB
–1
A
PC
150(Tc=25°C)
Tj
2-ø3.2±0.1
9
7
V
V(BR)CEO
a
b
2
3
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–70
10
–7
–10
5
–7
7
0.8typ
3.0typ
1.2typ
–1.2m A
–1.0 mA
–0.8m A
–0.6mA
–4
I B =–0.4mA
–2
0
0
–2
–4
–10
–2
–10A
–7A
I C =–5A
–1
0
–0.2
–6
h FE – I C Characteristics (Typical)
–0.5 –1
–5
–10
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
Typ
10,000
5,000
–5
–10–12
Transient Thermal Resistance
D C Cur r ent Gai n h F E
125˚C
D C Cur r ent Gai n h F E
0
25˚C
10000
–30˚C
5000
1000
800
–0.2
–0.5
Collector Current I C (A)
–1
–5
1
0.5
0.1
1
–10 –12
5
–10
P c – T a Derating
10
10
0m
s
ite
he
80
at
si
nk
Without Heatsink
Natural Cooling
fin
–0.5
120
In
DC
m
s
–1
40
–0.1
1
Emitter Current I E (A)
48
5
10
–0.05
–3
500 1000
160
–5
20
100
ith
40
0.5
50
W
Typ
0.05 0.1
10
Time t(ms)
M aximu m Power Dissip ation P C (W)
80
Collecto r Cur rent I C (A)
100
–2.5
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
–30
–2
2
(V C E =–12V)
0
0.02
–1
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut- off F re quen cy f T (MH Z )
0
Base-Emittor Voltage V B E (V)
50000
60
–4
–50 –100 –200
(V C E =–4V)
–1
–6
Base Current I B (mA)
40,000
–0.5
–8
–2
Collector-Emitter Voltage V C E (V)
1,000
–0.2
(V C E =–4V)
mp)
Collector Current I C (A)
–1.5 mA
–6
–12
e Te
–2 .0m A
–10
–8
–3
(Cas
–2 .0 m A
125˚C
A
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
m
E
Weight : Approx 18.4g
a. Type No.
b. Lot No.
θ j- a ( ˚C/W)
0
–1
C
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–12
3.0 +0.3
-0.1
5.45±0.1
B
VCC
(V)
I C – V CE Characteristics (Typical)
0.65 +0.2
-0.1
1.05 +0.2
-0.1
mp)
Temp
)
IEBO
2.1
e Te
V
–5
21.4±0.3
–150
VEBO
6.0±0.2
36.4±0.3
IC=–30mA
VCEO
Tstg
Conditions
VCB=–160V
(Case
V
External Dimensions MT-200
(Ta=25°C)
–30˚C
Unit
–160
■Electrical Characteristics
(Cas
2SB1570
VCBO
C
Application : Audio, Series Regulator and General Purpose
25˚C
Symbol
Equivalent circuit
4.0max
■Absolute maximum ratings (Ta=25°C)
20.0min
Darlington
B
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150
2000