( 7 0Ω ) E 2SB1648 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Unit –150 V Symbol ICBO VCEO –150 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE IB –1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C fT Tstg –55 to +150 Ratings Unit –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–30mA –150min V VCE=–4V, IC=–10A 5000min∗ IC=–10A, IB=–10mA –2.5max V IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A 45typ MHz COB °C Conditions VCB=–150V 320typ VCB=–10V, f=1MHz 6.0±0.2 2.1 2-ø3.2±0.1 9 7 Ratings VCBO pF a b 2 3 0.65 +0.2 -0.1 1.05 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –10 10 0.7typ 1.6typ 1.1typ 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) C E Weight : Approx 18.4g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 0 0 –2 –4 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –10 (V C E =–4V) 10,000 5,000 –1 –5 –10 –17 125˚C Transient Thermal Resistance Typ –0.5 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –17 ) mp Te se (Ca 0.1 1 m s s –5 120 ) at si nk –0.05 –3 emp he 10 eT ite Without Heatsink Natural Cooling fin –1 –0.5 160 In Co lle ctor Cu rre nt I C (A) DC 10 0m ith Emitter Current I E (A) 5 1000 2000 W 1 100 P c – T a Derating 80 40 –0.1 0.5 Cas 10 Time t(ms) Maxim um Power Dissip ation P C (W) 10 0.05 0.1 –30 0.5 200 –10 20 p) 5˚C 1 –50 40 –3 2 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F req uenc y f T (MH Z ) 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 50000 1,000 –0.2 0 –50 –100 –200 (V C E =–4V) DC Curr ent Gain h FE DC Curr ent Gain h FE –5 Base Current I B (mA) h FE – I C Characteristics (Typical) 50,000 5 ˚C ( I C =–5A –1 10 12 I C =–1 0A Tem I B =–0.3mA –5 I C =–15A ase –0.5mA –2 C (C –0.8 mA –10 15 25˚ –1.0 mA (V C E =–4V) 17 –3 θ j - a ( ˚C/W) –50 –15 Collector Current I C (A) –1 .5 m A Collector Current I C (A) –2mA –3mA mA –17 Collector-Emitter Saturation Voltage V C E (s at) (V) –1 0m A I C – V CE Characteristics (Typical) C External Dimensions MT-200 (Ta=25°C) 21.4±0.3 Symbol ■Electrical Characteristics (Ta=25°C) 4.0max ■Absolute maximum ratings Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 53