ETC 2SB1685

(7 0 Ω ) E
2SB1685
–110
V
VCEO
–110
VEBO
–5
IC
–6
IB
–1
PC
Tj
Tstg
C
External Dimensions MT-100(TO3P)
(Ta=25°C)
Ratings
Unit
ICBO
VCB=–110V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
V
V(BR)CEO
IC=–30mA
–110min
V
A
hFE
VCE=–4V, IC=–5A
5000min∗
A
VCE(sat)
IC=–5A, IB=–5mA
–2.5max
60(Tc=25°C)
W
VBE(sat)
IC=–5A, IB=–5mA
–3.0max
V
150
°C
fT
VCE=–12V, IE=0.5A
100typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
110typ
pF
15.6±0.4
9.6
19.9±0.3
2.0
Conditions
Symbol
1.8
VCBO
■Electrical Characteristics
a
4.8±0.2
5.0±0.2
Unit
4.0
Ratings
Symbol
2.0±0.1
ø3.2±0.1
b
V
2
4.0max
■Absolute maximum ratings (Ta=25°C)
Equivalent circuit
Application : Audio, Series Regulator and General Purpose
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2641)
20.0min
Darlington
B
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–30
6
–5
–10
5
–5
5
1.1typ
3.2typ
1.1typ
V CE ( sat ) – I B Characteristics (Typical)
–2
0
–4
0
–0.1
–6
–0.5 –1
Collector-Emitter Voltage V C E (V)
–5 –10
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
50000
50000
1000
500
–0.5
–1
–5 –6
Transient Thermal Resistance
D C Cur r ent Gai n h F E
Typ
5000
25˚C
10000
–30˚C
5000
1000
500
100
–0.01
–0.05 –0.1
Collector Current I C (A)
–0.5
Typ
p)
mp)
e Te
emp
)
Tem
se
se T
(Cas
–3
–1
5
1
0.5
–5 –6
1
5
10
50
100
500 1000 2000
Time t(ms)
P c – T a Derating
60
–20
120
–2
θ j-a – t Characteristics
Safe Operating Area (Single Pulse)
(V C E =–12V)
25˚C
–1
Collector Current I C (A)
f T – I E Characteristics (Typical)
s
he
at
si
nk
Without Heatsink
Natural Cooling
40
ite
–1
–0.5
–0.1
20
m
s
fin
40
DC
0m
In
60
10
10
ith
Co lle ctor Cu rre nt I C (A)
–5
80
W
Maxim um Power Dissipation P C (W)
–10
100
Cut-o ff Fr equ ency f T (M H Z )
D C Cur r ent Gai n h F E
125˚C
–0.05 –0.1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
100
–0.01
0
–50 –100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
10000
–2
–30˚C
I C =–3A
–1
–4
(Ca
–5A
(Ca
–2
˚C
I B =–0. 1mA
–2
0
(V C E =–4V)
–6
–3
125
Collector Current I C (A)
–0. 2m A
–4
1.4
E
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
–0 .3 m A
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
θ j- a ( ˚C/W)
–5m
A
–6
A
m 5mA
–1 –0.
A
.4m
–0
Collector-Emitter Saturation Voltage V C E (s at ) (V )
I C – V CE Characteristics (Typical)
5.45±0.1
B
20
Without Heatsink
0
0.02
0.05
0.1
0.5
1
Emitter Current I E (A)
56
5 6
–0.05
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150