SANKEN 2SC4298

2SC4298
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
100max
µA
V
IEBO
VEB=10V
100max
µA
10
V
V(BR)CEO
IC=25mA
400min
V
15(Pulse30)
A
hFE
VCE=4V, IC=8A
10 to 30
IB
5
A
VCE(sat)
IC=8A, IB=1.6A
0.5max
PC
80(Tc=25°C)
W
VBE(sat)
IC=8A, IB=1.6A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–1.5A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
85typ
pF
3.3
3.0
V
1.75
1.05 +0.2
-0.1
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
25
8
10
–5
0.8
–1.6
1max
3max
0.5max
B
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
0
1
2
3
12
5˚
C
5
–5
0.5
1
5
10
˚C
0
20
t on •t stg • t f – I C Characteristics (Typical)
8
25˚C
–55˚C
Sw it ching Time
DC C urrent G ain h FE
125˚C
10
1
5
10 15
5
t s tg
Transient Thermal Resistance
t o n• t s t g• t f (µ s)
50
0.5
V C C 200V
I C :I B1 :I B 2 =10:1:–2
1
0.5
t on
tf
0.1
0.5
1
5
0.4
10
15
0.5
0.1
1
10
1000
P c – T a Derating
In
fin
ite
he
40
at
si
nk
Ma xim um Powe r Dissipat io n P C (W)
ith
Without Heatsink
Natural Cooling
L=3mH
IB2=–1A
Duty:less than 1%
60
W
Collector Curr ent I C (A)
s
Without Heatsink
Natural Cooling
10
5
100
80
0µ
5
1.2
Time t(ms)
10
10
1.0
1
50
50
0.8
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.6
2
Collector Current I C (A)
Collector Current I C (A)
Collector Cur rent I C (A)
0.2
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
0
Collector Current I C (A)
h FE – I C Characteristics (Typical)
0.05
mp)
2
(
V C E (sat)
0.1
Collector-Emitter Voltage V C E (V)
5
0.02
4
Temp)
)
Temp
e Te
(Case
6
(Case
125˚C
0.5
Temp)
Cas
ase
25˚C (C
0
0.03 0.05
4
(V C E =4V)
˚C (
e Temp)
–55˚C (Cas
θ j- a ( ˚C/W)
0
E
125
I B =100mA
Collector Current I C (A)
200mA
5
1.0
em
p)
˚C
400mA
Weight : Approx 6.5g
a. Type No.
b. Lot No.
8
V B E (sat)
eT
600m A
10
C
25
Collector Current I C (A)
800 mA
3.35
1.5
10
1.5
as
1. 2A
C
5A
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
1.
4.4
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
15
0.65 +0.2
-0.1
5.45±0.1
1.5
I C – V CE Characteristics (Typical)
0.8
2.15
–55˚C
Tstg
ø3.3±0.2
a
b
)
IC
Temp
VEBO
3.45 ±0.2
(Case
400
5.5±0.2
25˚C
VCEO
15.6±0.2
16.2
V
0.8±0.2
VCB=500V
500
5.5
ICBO
VCBO
1.6
Unit
Symbol
23.0±0.3
2SC4298
Unit
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
2SC4298
Symbol
9.5±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
20
Without Heatsink
1
5
10
50
100
Collector-Emitter Voltage V C E (V)
96
500
1
5
10
50
100
Collector-Emitter Voltage V C E (V)
500
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150