SANKEN 2SC4304

2SC4304
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor)
hFE
µA
800min
V
VCE=4V, IC=0.7A
10 to 30
IB
1.5
A
VCE(sat)
IC=0.7A, IB=0.14A
0.5max
PC
35(Tc=25°C)
W
VBE(sat)
IC=0.7A, IB=0.14A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–0.3A
15typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
50typ
pF
Tstg
3.9
V
0.1
100mA
1
I B =50mA
1
2
3
0.7max
V C E (sat)
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
V B E (sat)
1
p)
–55˚C (Case Tem
p)
25˚C (Case Tem
Temp)
125˚C (Case
0.05
Collector-Emitter Voltage V C E (V)
0.1
0.5
1
0
7
5
10
5
0.5
1
3
t s tg
V C C 250V
I C :I B1 :–I B 2 =10:1.5:5
Transient Thermal Resistance
t o n• t s t g• t f (µ s)
–55˚C
Sw it ching Time
DC C urrent G ain h FE
25˚C
0.1
1
tf
0.5
t on
0.1
0.1
0.5
10
5
5
1
2
10
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
30
20
nk
Collecto r Cur rent I C (A)
P c – T a Derating
si
1000
1000
at
500
100
he
Collector Curr ent I C (A)
1
ite
100
Collector-Emitter Voltage V C E (V)
100
0.3
fin
50
0.5
In
s
)
0.01
0.005
50
10
1
ith
s
C
0.1
0.01
1.2
W
0µ
1
0.005
2
1.0
4
Ma xim um Powe r Dissipat io n P C (W)
10
µs
5
ms
=2
10
( Tc
Without Heatsink
Natural Cooling
0.8
35
0.5
0.05
0.6
Time t(ms)
50
1m
DC
0.1
0.05
5
0.4
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
1
0.2
Collector Current I C (A)
Collector Current I C (A)
0.5
0
Base-Emittor Voltage V B E (V)
t on •t stg • t f – I C Characteristics (Typical)
125˚C
0.05
1
3
(V C E =4V)
2
0.01
2
Collector Current I C (A)
h FE – I C Characteristics (Typical)
50
(V C E =4V)
3
2
0
0.01
4
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
mp)
200m A
0
4.0max
0.7max
e Te
Collector Current I C (A)
300m A
2
2.4±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
Cas
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V )
700mA
500 mA
0
–0.35
tf
(µs)
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
I C – V CE Characteristics (Typical)
3
tstg
(µs)
ton
(µs)
˚C (
–5
10
IB2
(A)
125
0.7
357
IB1
(A)
Collector Current I C (A)
250
VBB2
(V)
VBB1
(V)
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.2±0.2
θ j - a ( ˚ C/W)
IC
(A)
RL
(Ω)
1.35±0.15
2.54
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
ø3.3±0.2
a
b
p)
A
100max
e Tem
3(Pulse6)
IC
VEB=7V
IC=10mA
(Cas
V(BR)CEO
4.2±0.2
2.8 c0.5
4.0±0.2
IEBO
V
10.1±0.2
0.8±0.2
V
7
µA
±0.2
800
VEBO
100max
mp)
VCEO
VCB=800V
–55˚C
ICBO
Unit
e Te
V
2SC4304
(Cas
900
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
25˚C
VCBO
Symbol
16.9±0.3
Unit
8.4±0.2
■Electrical Characteristics
2SC4304
Symbol
13.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
10
Without Heatsink
100
500
Collector-Emitter Voltage V C E (V)
1000
2
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150