SANKEN 2SC3927

2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
100max
µA
V
IEBO
VEB=7V
100max
µA
V
V(BR)CEO
IC=10mA
550min
V
VCE=4V, IC=5A
10 to 28
10(Pulse15)
A
hFE
IB
5
A
VCE(sat)
PC
120(Tc=25°C)
W
VBE(sat)
Tj
150
°C
fT
–55 to +150
°C
COB
VCB=10V, f=1MHz
105typ
0.5max
IC=5A, IB=1A
1.2max
V
VCE=12V, IE=–1A
6typ
MHz
V
pF
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
5
10
–5
0.75
–1.5
1max
5max
0.5max
0
1
2
3
12
0.05 0.1
Collector-Emitter Voltage V C E (V)
C
5˚
5
–5
0.5
1
5
t o n • t s t g• t f ( µ s)
10
1
5
10
t s tg
5
V C C 250V
I C :I B 1 :–I B2 =10:1.5:3
1
0.5
t on
tf
0.1
0.2
0.5
20
10
10
10
0µ
s
0.1
1
10
Temp)
(Case
P c – T a Derating
120
500
Collector-Emitter Voltage V C E (V)
1000
nk
100
si
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
100
at
0.02
50
1000
he
500 600
100
ite
100
Collector-Emitter Voltage V C E (V)
82
0.5
Time t(ms)
1
0.05
50
10
1
fin
0.05
0.02
10
5
0.5
0.1
1.2
In
Without Heatsink
Natural Cooling
1.0
ith
1
0.5
0.1
1
5
Co lle ctor Cu rre nt I C ( A)
s
0.8
W
Co lle ctor Cu rre nt I C (A)
1m
0.6
2
M aximu m Power Dissipat io n P C (W)
20
ms
0.4
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.2
Collector Current I C (A)
Collector Current I C (A)
DC
Transient Thermal Resistance
–5 5˚ C
Switching Ti me
DC C urrent G ain h FE
25 ˚C
5
0
Base-Emittor Voltage V B E (V)
10
125˚ C
0.5
p)
0
10
t on •t st g • t f – I C Characteristics (Typical)
50
0.1
em
2
˚C
(V C E =4V)
0.05
4
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
eT
T
V C E (sat)
0
0.02
4
(Case
6
Cas
125˚C
emp)
θ j- a (˚ C/W)
0
p)
ase Tem
˚C (
I B =100mA
2
–55˚C (C
125
200mA
4
ase Temp)
25˚C (C
8
Collector Current I C (A)
400m A
6
V B E (sat)
1
)
Collector Current I C (A)
60 0m A
(V C E =4V)
10
mp
80 0m A
8
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
Te
1A
1.4
E
se
2A
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E(s a t) (V )
1.
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
I C – V CE Characteristics (Typical)
10
(C
a
50
IC
(A)
IB1
(A)
0.65 +0.2
-0.1
5.45±0.1
B
VBB2
(V)
˚C
250
5.45±0.1
VBB1
(V)
25
VCC
(V)
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
ø3.2±0.1
–55˚C
Tstg
a
b
IC=5A, IB=1A
)
7
IC
2.0±0.1
Temp
VEBO
4.8±0.2
(Case
550
15.6±0.4
9.6
25˚C
VCEO
19.9±0.3
V
1.8
VCB=800V
900
5.0±0.2
ICBO
VCBO
2.0
Unit
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
2SC3927
Unit
4.0
■Electrical Characteristics
Conditions
2SC3927
4.0max
Symbol
20.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150