SANKEN 2SC3831

2SC3831
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)
VCB=600V
VCEO
500
V
IEBO
VEB=10V
10
V
V(BR)CEO
10(Pulse20)
A
hFE
mA
100max
µA
IC=25mA
500min
V
VCE=4V, IC=5A
10 to 30
IB
4
A
VCE(sat)
IC=5A, IB=1A
0.5max
PC
100(Tc=25°C)
W
VBE(sat)
IC=5A, IB=1A
1 . 3 max
Tj
150
°C
fT
VCE=12V, IE=–1A
8typ
–55 to +150
°C
COB
VCB=10V, f=1MHz
105typ
V
MHz
1.05 +0.2
-0.1
5.45±0.1
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
40
5
10
–5
0.5
–1.0
1max
4.5max
0.5max
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
0
1
2
3
5
–5
V C E (sat)
0.05 0.1
0.5
1
5
–5 5˚C
10
1
5
10
5
t s tg
V C C 200V
I C :I B1 :I B2 =10:1:–2
1
0.5
t on
tf
0.1
0.2
0.5
s
5
10
0.1
10
Collector Curr ent I C ( A)
)
mp)
Temp
e Te
(Case
nk
Collector-Emitter Voltage V C E (V)
500 600
si
100
50
at
Without Heatsink
Natural Cooling
L=3mH
I B 2 =–0.5A
Duty:less than 1%
he
0.01
50
–55˚C
P c – T a Derating
ite
Collector-Emitter Voltage V C E (V)
500 600
1000
fin
100
100
In
0.05
50
1
ith
ms
C
1
0.5
1
0.05
0.02
8 10
Tem
0.5
W
10
Without Heatsink
Natural Cooling
1.2
100
5
1
1.0
Time t(ms)
10
0.5
0.8
1
M aximum Power Dissipa ti on P C (W)
0µ
D
Collect or Curr ent I C (A)
10
0.6
θ j-a – t Characteristics
30
30
0.1
1
0.4
2
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
5
0.2
Collector Current I C (A)
Collector Current I C (A)
s
0
Base-Emittor Voltage V B E (V)
Transient Thermal Resistance
t on• t s t g • t f (µ s)
25˚C
Switching T im e
DC Cur rent Gain h F E
125˚C
1m
p)
0
10
t on •t stg • t f – I C Characteristics (Typical)
50
10
se
˚C
2
˚C
10
0.5
125
C
5˚
(V C E =4V)
0.1
4
Collector Current I C (A)
h FE – I C Characteristics (Typical)
0.05
6
(Ca
mp
12
Collector-Emitter Voltage V C E (V)
5
0.02
8
Collector Current I C (A)
)
Temp
)
(Case
Te
125˚C
0
0.02
4
p)
ase Tem
25˚C (C
θ j- a ( ˚C/W)
0
e Temp)
–55˚C (Cas
se
100mA
2
V B E (sat)
1
(C
a
200mA
4
(V CE =4V)
10
˚C
400 mA
6
1.4
E
I C – V BE Temperature Characteristics (Typical)
25
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (sa t) (V )
A
.2
=1
IB
Collector Current I C (A)
60 0m A
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
(I C /I B =5)
8
0.65 +0.2
-0.1
5.45±0.1
B
IC
(A)
800 mA
2
3
pF
RL
(Ω)
1A
ø3.2±0.1
V
VCC
(V)
10
2.0±0.1
b
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
a
4.8±0.2
(Cas
Tstg
15.6±0.4
9.6
25˚C
IC
1max
1.8
ICBO
5.0±0.2
V
Unit
2.0
600
2SC3831
Conditions
4.0
VCBO
VEBO
External Dimensions MT-100(TO3P)
(Ta=25°C)
Unit
19.9±0.3
Symbol
2SC3831
20.0min
Symbol
4.0max
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
71