SANKEN 2SC4907

2SC4907
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
VCEO
500
V
IEBO
VEBO
10
V
V(BR)CEO
6(Pulse12)
A
hFE
VCE=4V, IC=2A
10to30
Unit
1max
mA
VEB=10V
100max
µA
IC=25mA
500min
V
VCB=600V
IB
2
A
VCE(sat)
IC=2A, IB=0.4A
0.5max
PC
30(Tc=25°C)
W
VBE(sat)
IC=2A, IB=0.4A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
8typ
MHz
°C
COB
VCB=10V, f=1MHz
45typ
pF
3.9
V
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
100
2
10
–5
0.2
–0.4
1max
4.5max
0.5max
0
1
0
2
3
(C
125˚C
V C E (sat)
0
0.02
4
Collector-Emitter Voltage V C E (V)
0.05 0.1
0.5
ase
Te
1
10
1
5 6
1
0.5
t on
tf
0.1
0.2
0.5
0.4
1
5
6
0.3
1
mp)
e Te
(Cas
10
100
1000
P c – T a Derating
he
at
si
nk
M aximum Power Dissipa ti on P C ( W)
ite
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
20
fin
Collect or Cur re nt I C (A)
)
0.5
In
1
0.5
emp
1
ith
Without Heatsink
Natural Cooling
1.4
30
5
1
1.2
W
5
1.0
Time t(ms)
10
s
0.8
4
20
0µ
0.6
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.2
Collector Current I C (A)
20
Collect or Cur ren t I C (A)
t s tg
V C C 200V
I C :I B1 :I B 2 =10:1:–2
Collector Current I C (A)
0.5
Transient Thermal Resistance
–55˚C
10
0
Base-Emittor Voltage V B E (V)
7
5
t o n• t s t g• t f (µ s)
25˚C
Sw it ching Time
DC C urrent G ain h FE
125˚C
0.5
)
0
5
t on •t stg • t f – I C Characteristics (Typical)
50
0.1
Te
1
C
5˚
–5
(V C E =4V)
0.05
mp
m
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
2
–55˚C
1
25˚C
3
se
I B =100mA
p)
–55˚C (Case Tem
Temp)
25˚C (Case
Temp)
(Case
125˚C
(Ca
2
1
4
˚C
200mA
θ j - a ( ˚ C/W)
3
V B E (sat)
125
300m A
5
Collector Current I C (A)
400m A
4
(V CE =4V)
6
p)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
600m A
5
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
80 0m A
1A
2.4±0.2
2.2±0.2
VCC
(V)
6
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
1.35±0.15
se T
–55 to +150
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
(Ca
Tstg
10.1±0.2
25˚C
IC
Conditions
4.0±0.2
ICBO
0.8±0.2
V
±0.2
2SC4907
Unit
600
16.9±0.3
Symbol
2SC4907
VCBO
Symbol
External Dimensions FM20(TO220F)
(Ta=25°C)
8.4±0.2
■Electrical Characteristics
13.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
10
Without Heatsink
2
0.1
10
50
100
500
Collector-Emitter Voltage V C E (V)
120
1000
0.1
10
50
100
500
Collector-Emitter Voltage V C E (V)
1000
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150