SANKEN 2SC5099

2SC5099
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907)
µA
V
IEBO
VEB=6V
10max
µA
6
V
V(BR)CEO
IC=50mA
80min
V
6
A
hFE
VCE=4V, IC=2A
50min∗
IB
3
A
VCE(sat)
IC=2A, IB=0.2A
0.5max
V
PC
60(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
110typ
pF
–55 to +150
°C
∗hFE Rank
O(50 to 100), P(70 to 140), Y(90 to 180)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
30
10
3
10
–5
0.3
–0.3
0.16typ
2.60typ
0.34typ
20mA
2
I B =10mA
0
1
0
2
3
1
I C =6A
0
4
0
0.5
1.0
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
D C Cur r ent Gai n h F E
Typ
50
1
100
25˚C
–30˚C
50
20
0.02
56
0.1
Collector Current I C (A)
1
0.5
2
1
56
θ j-a – t Characteristics
5
1
0.5
0.3
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
20
60
10
si
nk
Without Heatsink
Natural Cooling
at
0.5
he
1
40
ite
Collect or Cur ren t I C (A)
s
DC
fin
10
s
ms
In
20
0m
1m
ith
Typ
5
10
W
30
10
Maxim um Power Dissip ation P C (W)
40
Cut-o ff F requ ency f T (MH Z )
DC C urrent G ain h FE
125˚C
0.5
0
Base-Emittor Voltage V B E (V)
200
0.1
0
1.5
Base Current I B (A)
300
30
0.02
2
4A
(V C E =4V)
100
4
2A
Collector-Emitter Voltage V C E (V)
h FE – I C Characteristics (Typical)
E
Cas
e Te
mp
(Cas
e Tem )
p)
30mA
2
˚C (
50 mA
4
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
(V C E =4V)
125
8
3.35
1.5
6
Collector Current I C (A)
10
0mA
θ j- a ( ˚C/W)
15
A
0m
4.4
I C – V BE Temperature Characteristics (Typical)
3
Transient Thermal Resistance
0m
A
0.65 +0.2
-0.1
5.45±0.1
B
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
20
0m
0.8
2.15
1.5
RL
(Ω)
A
1.75
1.05 +0.2
-0.1
VCC
(V)
I C – V CE Characteristics (Typical)
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
6
5.5±0.2
3.0
23.0±0.3
15.6±0.2
16.2
Tstg
0.8±0.2
IC
10max
5.5
VEBO
VCB=120V
1.6
80
ICBO
3.3
VCEO
Unit
)
V
2SC5099
Temp
120
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
(Case
VCBO
Symbol
–30˚C
Unit
25˚C
2SC5099
9.5±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
20
Without Heatsink
0
–0.02
0.1
–0.1
–1
Emitter Current I E (A)
–6
5
10
50
Collector-Emitter Voltage V C E (V)
100
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
125