2SC3263 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294) 100max µA V IEBO VEB=5V 100max µA IC=25mA 230min V VCE=4V, IC=5A 50min∗ IC=5A, IB=0.5A 2.0max V IB 4 A PC 130(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) Tstg a ø3.2±0.1 b VCE(sat) 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 500 –500 0.30typ 2.40typ 0.50typ A 10 0m A 5 50mA I B =20mA 0 0 1 2 3 2 1 I C =10A 0 4 0 0.5 1.0 1.5 0 2.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 200 1 5 100 25˚C –30˚C 50 10 0.02 10 15 Transient Thermal Resistance DC C urrent G ain h FE Typ 50 Collector C urrent I C (A) 0.1 0.5 2 1 5 10 15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 130 40 10 80 at si nk Without Heatsink Natural Cooling 20 he 1 0.5 ite Collector Curr ent I C (A) 5 100 fin 40 DC In 60 s ith Typ m W 10 Maxim um Power Di ssip ation P C (W) 100 Cut- off F requ ency f T (MH Z ) DC Curr ent Gain h F E 125˚C 0.5 1 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) 10 0.02 5 5A Collector-Emitter Voltage V C E (V) 100 10 eT em p Tem ) p) 200m se 10 Ca mA C( mA 400 25˚ Collector Current I C (A) 600 (V C E =4V) 15 3 as A (C 1.0 5˚C A 12 5 1. Collector Current I C (A) A 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚ C/W) 0A 3. 0 2. C Weight : Approx 6.0g a. Type No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) I C – V CE Characteristics (Typical) 15 0.65 +0.2 -0.1 p) hFE Tem V(BR)CEO A se V 15 (Ca 5 IC 2.0±0.1 ˚C VEBO 4.8±0.2 –30 230 19.9±0.3 VCEO 15.6±0.4 9.6 1.8 VCB=230V V 5.0±0.2 ICBO 230 2.0 Unit VCBO External Dimensions MT-100(TO3P) (Ta=25°C) 2SC3263 Unit 4.0 Symbol Conditions 2SC3263 4.0max ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 20.0min LAPT 50 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) –10 3 10 100 Collector-Emitter Voltage V C E (V) 300 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 63