SANKEN 2SC3263

2SC3263
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294)
100max
µA
V
IEBO
VEB=5V
100max
µA
IC=25mA
230min
V
VCE=4V, IC=5A
50min∗
IC=5A, IB=0.5A
2.0max
V
IB
4
A
PC
130(Tc=25°C)
W
fT
VCE=12V, IE=–2A
60typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
250typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), Y(70 to 140)
Tstg
a
ø3.2±0.1
b
VCE(sat)
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
5.45±0.1
5.45±0.1
B
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
60
12
5
10
–5
500
–500
0.30typ
2.40typ
0.50typ
A
10 0m A
5
50mA
I B =20mA
0
0
1
2
3
2
1
I C =10A
0
4
0
0.5
1.0
1.5
0
2.0
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
200
200
1
5
100
25˚C
–30˚C
50
10
0.02
10 15
Transient Thermal Resistance
DC C urrent G ain h FE
Typ
50
Collector C urrent I C (A)
0.1
0.5
2
1
5
10 15
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
130
40
10
80
at
si
nk
Without Heatsink
Natural Cooling
20
he
1
0.5
ite
Collector Curr ent I C (A)
5
100
fin
40
DC
In
60
s
ith
Typ
m
W
10
Maxim um Power Di ssip ation P C (W)
100
Cut- off F requ ency f T (MH Z )
DC Curr ent Gain h F E
125˚C
0.5
1
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.1
0
Base Current I B (A)
h FE – I C Characteristics (Typical)
10
0.02
5
5A
Collector-Emitter Voltage V C E (V)
100
10
eT
em
p
Tem )
p)
200m
se
10
Ca
mA
C(
mA
400
25˚
Collector Current I C (A)
600
(V C E =4V)
15
3
as
A
(C
1.0
5˚C
A
12
5
1.
Collector Current I C (A)
A
1.4
E
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚ C/W)
0A
3.
0
2.
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
I C – V CE Characteristics (Typical)
15
0.65 +0.2
-0.1
p)
hFE
Tem
V(BR)CEO
A
se
V
15
(Ca
5
IC
2.0±0.1
˚C
VEBO
4.8±0.2
–30
230
19.9±0.3
VCEO
15.6±0.4
9.6
1.8
VCB=230V
V
5.0±0.2
ICBO
230
2.0
Unit
VCBO
External Dimensions MT-100(TO3P)
(Ta=25°C)
2SC3263
Unit
4.0
Symbol
Conditions
2SC3263
4.0max
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
20.0min
LAPT
50
Without Heatsink
0
–0.02
0.1
–0.1
–1
Emitter Current I E (A)
–10
3
10
100
Collector-Emitter Voltage V C E (V)
300
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
63