2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) Symbol Conditions 2SC3857 Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V 24.4±0.2 VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat) IC=10A, IB=1A 3.0max V PC 150(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 7 21.4±0.3 b 5.45±0.1 IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.3typ 2.4typ 0.4typ 0 I B =50mA 0 1 2 3 1 0 0 1 2 3 (V C E =4V) 50 5 Transient Thermal Resistance DC Curr ent Gain h FE Typ 100 125˚C 25˚C 100 –30˚C 50 20 0.02 10 15 Collector Current I C (A) 0.1 0.5 1 5 10 15 0.5 0.1 1 10 10ms s 10 100 Collector-Emitter Voltage V C E (V) 300 nk 2 si –10 80 at 0.1 he Without Heatsink Natural Cooling ite 0.5 fin 1 In 5 120 ith Collector Cu rre nt I C (A) C m W 10 2000 s s 20 10 3m 0m Typ 1000 P c – T a Derating 10 30 100 Time t(ms) Ma xim um Powe r Dissipat io n P C (W) D –1 1 160 20 Emitter Current I E (A) 2 50 40 2 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) –0.1 1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff Fr equ ency f T (M H Z ) DC Curr ent Gain h FE 300 0 –0.02 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 1 0 4 Base Current I B (A) (V C E =4V) 0.5 p) 10A 5A 4 h FE – I C Characteristics (Typical) 0.1 Tem I C =15A Collector-Emitter Voltage V C E (V) 20 0.02 5 se 5 10 (Ca 10 0m A 2 ˚C 20 0m A 10 (V C E =4V) 15 125 A Collector Current I C (A) 400m 3.0 +0.3 -0.1 E I C – V BE Temperature Characteristics (Typical) 3 θ j - a (˚C /W) A C Weight : Approx 18.4g a. Type No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 5A 1. Collector Current I C (A) 6 m 00 0.65 +0.2 -0.1 5.45±0.1 B RL (Ω) 1A 2 3 1.05 +0.2 -0.1 VCC (V) I C – V CE Characteristics (Typical) 9 a ■Typical Switching Characteristics (Common Emitter) 15 2.1 2-ø3.2±0.1 20.0min Tstg 6.0±0.2 36.4±0.3 ) ICBO Temp V (Case Unit 200 –30˚C 2SC3857 VCBO External Dimensions MT-200 (Ta=25°C) 25˚C Symbol ■Electrical Characteristics 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 79