2SC4388 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673) V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 300typ –55 to +150 ∗hFE Rank °C pF 1.75 16.2 Tstg ø3.3±0.2 a b 3.0 hFE 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 1.5 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 1 –1 0.5max 1.8max 0.6max I B =20mA 0 0 1 2 3 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 0.5 1 5 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 100 25˚C 50 –30˚C 20 0.02 10 15 0.1 Collector Current I C (A) 1 0.5 2 1 5 10 15 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 40 100 10 Typ 5 he at si nk Without Heatsink Natural Cooling ite 0.5 60 fin 1 80 In 10 s DC ith 20 0m s W Collect or Cur ren t I C (A) 10 m Maxim um Power Dissipation P C (W) 10 Cut- off F req uency f T (M H Z ) DC Curr ent Gain h F E 125˚C 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 20 0.02 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) 5A Collector-Emitter Voltage V C E (V) 100 5 e Te 1 (Cas 50mA 5 E 10 25˚C 100 mA 2 mp) 20 0m A 10 e Te A C (V C E =4V) Cas 300m 3.35 Weight : Approx 6.5g a. Part No. b. Lot No. 15 3 ˚C ( mA 125 0 50 Collector Current I C (A) A 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) Collector Current I C (A) 7 m 00 4.4 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1A 15 0.8 2.15 O(50 to 100), P(70 to 140), Y(90 to 180) ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 3.45 ±0.2 Temp) V(BR)CEO A 5.5±0.2 (Case V 15 15.6±0.2 23.0±0.3 6 IC 0.8±0.2 Unit 200 5.5 Unit Ratings 1.6 Ratings VCBO VEBO External Dimensions FM100(TO3PF) (Ta=25°C) Conditions 3.3 Symbol –30˚C Symbol ■Electrical Characteristics 9.5±0.2 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 40 20 0.1 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 103