C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB VCB=10V, f=1MHz 120typ pF A hFE 1 A VCE(sat) PC 200(Tc=25°C) W VBE(sat) Tj 150 °C –55 to +150 °C 9 a b 2 3 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 5 0 I B =0.3mA 0 2 4 I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 5000 1000 1 ˚C 25 Transient Thermal Resistance DC Curr ent Gain h FE 50000 10000 10000 5000 25 –30 ˚C ˚C 1000 1 5 10 17 Collector Current I C (A) 500 02 0.5 1 5 10 17 0.1 10 1000 2000 P c – T a Derating 200 120 ite he at si nk Maxim um Power Dissip ation P C (W) 160 fin –10 100 Time t(ms) In Emitter Current I E (A) 1 ith 20 –1 p) 0.5 W 40 2.6 1 Safe Operating Area (Single Pulse) 60 2 2 80 –0.1 1 θ j-a – t Characteristics (V C E =12V) 0 –0.02 0 Collector Current I C (A) f T – I E Characteristics (Typical) Cu t-off Fr eque ncy f T (MH Z ) DC C urrent G ain h FE 0 100 200 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 10 Tem I C =.15A se 0.5mA 2 (Ca 0. 8m A 10 15 125 Collector Current I C (A) 1. 0m A (V CE =4V) 17 3 Collector Current I C (A) 1 .5 m A A 2m I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚C/W) A Collector-Emitter Saturation Voltage V C E (s at) (V) 15 3m 50mA 17 E Weight : Approx 18.4g a. Type No. b. Lot No. V CE ( sa t ) – I B Characteristics (Typical) 10mA C ˚C I C – V CE Characteristics (Typical) 3.0 +0.3 -0.1 5.45±0.1 B VCC (V) 0.65 +0.2 -0.1 1.05 +0.2 -0.1 mp) 17 IB 2-ø3.2±0.1 mp) IC 2.1 e Te V(BR)CEO 24.4±0.2 (Cas IEBO V 6.0±0.2 36.4±0.3 7 100max V 5 Tstg 2SD2561 VEB=5V 150 VEBO External Dimensions MT-200 (Ta=25°C) Conditions IC=30mA VCEO E –30˚C V Symbol e Te 150 VCBO ■Electrical Characteristics (Cas Unit 25˚C 2SD2561 21.4±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 80 40 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 159