2SD2439

Equivalent circuit
2SD2439
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588)
V
IEBO
VEB=5V
100max
µA
V
5
V
V(BR)CEO
IC
10
A
hFE
IC=30mA
150min
VCE=4V, IC=7A
5000min∗
IC=7A, IB=7mA
2.5max
15.6±0.2
A
PC
80(Tc=25°C)
W
VBE(sat)
IC=7A, IB=7mA
3.0max
V
Tj
150
°C
fT
VCE=12V, IE=–2A
55typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
95typ
pF
3.3
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
70
10
7
10
–5
7
–7
0.5typ
10.0typ
1.1typ
0.6mA
4
I B =0.4mA
2
0
0
2
4
2
I C =10A
I C =7A
I C =5A
1
0
6
0.2
0.5
1
5
10
50
h FE – I C Characteristics (Typical)
1
(V C E =4V)
10000
5000
125˚C
10000
25˚C
5000
–30˚C
Transient Thermal Resistance
DC Curr ent Gain h F E
Typ
1000
5
500
0.2
10
0.5
Collector Current I C (A)
2.5
1
5
10
3
1
0.5
0.1
1
5
10
50 100
500 1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
70000
50000
1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
80
30
10
m
10
s
s
he
40
at
si
nk
Without Heatsink
Natural Cooling
20
ite
0.5
fin
1
60
In
40
5
0m
ith
Typ
60
DC
10
W
Collecto r Cur ren t I C (A)
80
Ma xim um Powe r Dissipation P C ( W)
100
Cut- off Fr equ ency f T (MH Z )
DC Curr ent Gain h FE
0
100 200
Base Current I B (mA)
40000
0.5
4
2
Collector-Emitter Voltage V C E (V)
1000
02
6
p)
0.8mA
Tem
6
8
se
1m A
(V C E =4V)
10
3
(Ca
1.2 mA
3.35
Weight : Approx 6.5g
a. Part No.
b. Lot No.
E
˚C
Collector Current I C (A)
8
C
125
1. 5m A
Collector Current I C (A)
A
0.65 +0.2
-0.1
1.5
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚ C/ W)
2m
Collector-Emitter Saturation Voltage V C E (s at) (V )
10 m A
2.
5m
A
10
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
+0.2
-0.1
5.45±0.1
1.5
VCC
(V)
0.8
2.15
1.05
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
I C – V CE Characteristics (Typical)
1.75
16.2
Tstg
3.0
1
VCE(sat)
3.45 ±0.2
ø3.3±0.2
a
b
V
IB
5.5±0.2
mp)
VEBO
0.8±0.2
µA
5.5
100max
23.0±0.3
VCB=160V
1.6
150
ICBO
mp)
VCEO
Unit
e Te
V
Ratings
e Te
160
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Symbol
(Cas
VCBO
■Electrical Characteristics
(Cas
Unit
–30˚C
Ratings
Symbol
E
Application : Audio, Series Regulator and General Purpose
25˚C
■Absolute maximum ratings (Ta=25°C)
(7 0 Ω )
9.5±0.2
Darlington
C
B
20
0.1
0
–0.02
–0.1
–1
Emitter Current I E (A)
–10
0.05
3
Without Heatsink
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
3.5
0
0
50
100
150
Ambient Temperature Ta(˚C)
153