Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V(BR)CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A 60typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF Tstg 3.9 1 VCE(sat) 1.35±0.15 1.35±0.15 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) 2.4±0.2 2.2±0.2 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 30 6 5 10 –5 5 –5 0.8typ 6.2typ 1.1typ Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) I B =0.1mA 0 0 2 4 I C =3A 0 6 0.5 0.1 Collector-Emitter Voltage V C E (V) 1 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) Typ 1000 500 0.5 1 125˚C Transient Thermal Resistance DC C urrent G ain h FE 50000 5000 10000 25˚C 5000 –30˚C 1000 500 100 0.01 56 0.1 Collector Current I C (A) p) em eT as (C ) ) Temp 1 0.5 2 2.5 1 θ j-a – t Characteristics 4 1 0.5 0.3 56 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 30 80 10 he at si nk Without Heatsink Natural Cooling ite 1 0.5 20 fin 20 DC 10 m s 0m s In 40 10 5 ith Collector Cur rent I C (A) 60 W Maximu m Power Dissipa tion P C (W) Typ Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE 50000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) 100 0.01 0 100 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 (Case 1 –30˚C 2 I C =5A 4 Temp 0.2mA 2 5˚C 4 12 Collector Current I C (A) 0.3 mA (V CE =4V) 6 3 (Case 0. 4m A 25˚C mA Collector Current I C (A) 5 0. θ j - a (˚C /W) 5mA 6 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 1m A I C – V CE Characteristics (Typical) ø3.3±0.2 a b V IB 4.2±0.2 2.8 c0.5 4.0±0.2 110 Ratings 0.8±0.2 VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol E Application : Audio, Series Regulator and General Purpose Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) ■Absolute maximum ratings (Ta=25°C) (7 0 Ω ) 13.0min Darlington C B 10 0.1 Without Heatsink 2 0 –0.02 –0.1 –1 Emitter Current I E (A) –6 0.05 3 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 161