TO-220 3A High sensitive Thyristor TF321M-A, TF341M-A, TF361M-A ■ Features External Dimensions (Unit: mm) 12.0 min ●High sensitive Gate trigger Current: IGT=0.1mA max 2.1max φ 3.75±0.1 a b ± 1.35 0.15 4.0 max ●Average on-state current: IT(AV)=3A 5.0max 10.4max 16.7max 0.2 3.0±0.2 8.8± ●Repetitive peak off-state voltage: VDRM=200, 400, 600V +0.2 0.65 – 0.1 ± 2.5 0.1 ± 1.7 0.2 ± 2.5 0.1 (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) a. Part Number b. Lot Number Weight: Approx. 2.6g ■Absolute Maximum Ratings Ratings Parameter Symbol Repetitive peak off-state voltage VDRM 200 400 600 V Repetitive peak reverse voltage VRRM 200 400 600 V Non-repetitive peak off-state voltage VDSM 300 500 700 V Non-repetitive peak reverse voltage VRSM 300 500 700 Average on-state current IT(AV) 3.0 A IT(RMS) 4.7 A RMS on-state current TF321M-A TF341M-A TF361M-A Unit Tj= –40 to +125°C, RGK =1kΩ V Surge on-state current ITSM 60 A Peak forward gate current IFGM 2.0 A Peak forward gate voltage VFGM 10 V Peak reverse gate voltage VRGM 5.0 Peak gate power loss PGM 5.0 PG (AV) 0.5 W Junction temperature Tj – 40 to +110 °C Storage temperature Tstg – 40 to +125 °C Average gate power loss Conditions 50Hz Half-cycle sinewave, Continuous current, Tc=87°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f 50Hz, duty V f 50Hz W f 50Hz, duty 10% 10% ■Electrical Characteristics Parameter Symbol Ratings min typ max Unit Off-state current IDRM 1.0 mA Reverse current IRRM 1.0 mA On-state voltage VTM 1.4 V Gate trigger voltage VGT 1 Gate trigger current IGT 0.1 Gate non-trigger voltage VGD Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance 18 V mA V 0.1 IH 1.0 mA dv/dt 20 V/µS tq 30 Rth µS 3.0 °C/W Conditions Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=5A VD=6V, RL=10Ω, TC=25°C VD=1/2×VDRM, Tj=125°C, RGK=1kΩ RGK=1kΩ, Tj=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF Tc=25°C Junction to case TF321M-A, TF341M-A, TF361M-A vT – iT Characteristics (max) ITSM Ratings 12 Initial junction temperature Tj=125°C I TSM vGF (V) Gate voltage 20 6 W 1 40 =5 5 8 M Surge on-state current ITSM (A) 10 10 10 ms 1 cycle 60 PG Tj= 12 5°C Tj= 25° C iT (A) 50 On-state current Gate Characteristics 80 100 4 2 0.5 0 3.0 4.0 θ=30° 2 75 3 50 0 0 1 2 3 4 5 0 1 2 3 4 5 Average on-state current IT(AV) (A) Pulse trigger temperature Characteristics igt (Typical) 50 igt 50% tw 50% tw 10 ( 10 gate trigger IGT DC current at 25°C ) vgt ) 5 trigger current igt (Gate ) at Ta and tw ( iGF (A) 25 1 50 gate trigger VGT DC voltage at 25°C 2 Gate current 100 180° 60° Pulse trigger temperature Characteristics vgt (Typical) 1 0.5 1 10 2 10 5 1 0.5 10 3 1 10 2 10 Pulse width tw (µs) Pulse width 10 3 t w (µs) VGT temperature Characteristics IGT temperature Characteristics (Typical) (Typical) 0.6 0.4 0.2 0 – 40 0 25 50 75 100 Junction temperature Tj (°C) 125 20 10 0 –40 Transient thermal resistance Characteristics (Junction to case) 10 rth (°C/W) 24 Gate trigger current IGT (µA) 0.8 (VD=6V, RL=10Ω) Transient thermal resistance (VD=6V, RL=10Ω) 1.0 Gate trigger voltage VGT (V) 1 0° θ 180° 90° 4 125 120° 150° 0° θ 180° 5 0 100 50Hz Half-cycle sinewave θ : Conduction angle 60° 180° 150° 120° 90° Case temperature TC (°C) Average on-state power PT(AV) (W) 150 Average on-state current IT(AV) (A) trigger voltage vgt ( Gate ) at Ta and tw 50 DC 6 0 10 IT(AV) – Tc Ratings 50Hz Half-cycle sinewave θ : Conduction angle 3 5 Number of cycle IT(AV) – PT(AV) Characteristics 7 0 1 vT ( V ) DC 2.0 On-state voltage θ=30° 0.3 1.0 0 25 50 75 100 Junction temperature Tj (°C) 125 1 0.1 1 10 10 2 10 3 10 4 t, Time (ms) 19