INCHANGE Thyristors 2P4M PLASTIC MOLDED THYRISTOR Features ・With TO-202 package ・1cathode 2 anode 3 gate KAG Absolute maximum ratings(Ta=25℃) VDRM PARAMETER Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage SYMBOL UNIT V 400 (note:RGK=1kΩ) V 。 IT(AV) On-state current ITSM Surge non-repetitive on-state current PGM Peak gate power dissipation PG(AV) 400 MIN (note:RGK=1kΩ) 2(Tc=77℃,θ=180 Single phase(1/2wave) A 20 A 0.5 (f ≥50Hz, Duty ≤10%) W 0.1 W Average gate power dissipation IFGM Peak gate forward current 0.2 (f ≥50Hz, Duty ≤10%) A VRGM Peak gate reverse voltage 6 V -40 to + 125 ℃ Tj Junction temperature Electrical characteristics (Ta=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM,Tj=125℃,RGK=1kΩ 100 μA IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃,RGK=1kΩ 100 μA VTM On-state voltage ITM=4A 1.8 V IGT Gate-trigger current VDM=6V;RL=100Ω,RGK=1kΩ 100 μA VGT Gate-trigger voltage VDM=6V;RL=100Ω,RGK=1kΩ 0.8 V VGD Gate non-trigger voltage VDRM=1/2VDRM,Tj=125℃,RGK=1kΩ Holding current VD=24V; RGK=1kΩ,ITM=4A 5 mA Thermal resistance Junction to case 10 ℃/W IH Rth(j-c) 0.2 V