SANKEN STA203A

1.2A 3 circuits Triac Array
STA203A
■ Features
External Dimensions
(Unit: mm)
11.3±0.2
●RMS on-state current: IT(RMS)=1.2A
)
a
b
4.7±0.5
1.0±0.25
0.5±0.15
2.54
7✕ 2.54=17.78 ±0.25
C1.5±0.5
1
2
T1 G
3
4
T2 G
5
6
T2 G
7
0.5±0.15
1.2±0.2
●Gate trigger current: IGT=3mA max (MODE , ,
2.3±0.2
●Repetitive peak off-state voltage: VDRM=400V
4.0±0.2
20.2±0.2
9.0±0.2
●1.2A 3 Triacs combined one package
8
3
5
TR1
7
TR2
2
4
TR3
6
8
1
T2 T1
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
■Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Repetitive peak off-state voltage
VDRM
400
V
RMS on-state current
IT(RMS)
1.2
A
Conduction angle 360°, Tc=97°C
Surge on-state current
ITSM
10
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage
VGM
6
V
Peak gate current
IGM
0.5
A
W
PGM
1
PG(AV)
0.1
W
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Peak gate power loss
Average gate power loss
Conditions
■Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
(Tj=25°C, unless otherwise specified)
Ratings
min
typ
max
0.1
1.0
0.1
1.6
2.0
Gate trigger voltage
0.7
VGT
0.8
Unit
mA
V
Conditions
VD=VDRM, RGK=∞, Tj=125°C
VD=VDRM, RGK=∞, Tj=25°C
Pulse test, ITM=1.6A
+
1.2
1.2
V
VD=6V, RL=10Ω, TC=25°C
Gate trigger current
1.8
IGT
2.3
Holding current
Thermal resistance
62
VGD
IH
Rth
–
–
–
–
+
+
+
T2 , G
T2 , G
T2 , G
3.0
3.0
3.0
mA
VD=6V, RL=10Ω, TC=25°C
+
–
–
–
–
+
T2 , G
T2 , G
T2 , G
13.0
Gate non-trigger voltage
+
T2 , G
2.0
2.0
+
T2 , G
3.5
V
0.1
5.0
20.0
mA
°C/W
VD=1/2×VDRM, Tj=125°C
VD=6V
Junction to case
STA203A
5
Tj=125°C
50Hz
10
6
4
5
2.0
3.0
1
5
10
50
0
100
IT(RMS) – Tc Ratings
1.0
(
TR1, TR2 or
TR2, TR3
Ambient temperature Ta (°C)
Case temperature TC (°C)
θ2
)
100
2 elements operation
( TR 2, TR 3)
3 elements operation
75
50
Full-cycle sinewave
Conduction angle
θ=θ1+ θ2 =360°
25
θ2
1.0
1.5
0
RMS on-state current IT(RMS) (A)
TR , TR or
( TR
)
, TR
1
2
50
25
–20°C
25°C
75°C
125°C
100
1000
2 elements operation
)
–20°C
25°C
1.0
75°C
125°C
10
100
1000
10
100
Pulse width
Tj= – 40°C
1000
t w (µs)
–20°C
25°C
1.0
75°C
125°C
0.5
0.5 1
10
100
1000
(MODE – )
tw
30
igt
tw
10
(
10
Tj= – 40°C
trigger current
igt (Gate
)
at Tj and tw
125°C
0.1
0.5 1
1.5
Pulse width tw (µs)
igt
)
75°C
vgt
tw
(
Tj= – 40°C
0.5
0.5 1
2.0
gate trigger
VGT DC
voltage at 25°C
1.5
(
25°C
(
i
trigger current
igt (Gate
)
at Tj and tw
–20°C
1.5
igt (Typical)
gate trigger
IGT DC
current at 25°C
)
(
)
Tj= – 40°C
1.0
(MODE – )
vgt
30
tw
10
0.5
RMS on-state current IT(RMS) (A)
Pulse width tw (µs)
igt
1
0
1.5
(MODE – )
30
gate trigger
IGT DC
current at 25°C
1.0
tw
(MODE – )
gt Gate trigger current
at Tj and tw
0.5
2.0
Pulse width tw (µs)
Pulse trigger temperature Characteristics
2
3
( TR 2, TR 3)
trigger voltage
vgt ( Gate
)
at Tj and tw
Tj= – 40°C
trigger voltage
vgt ( Gate
)
at Tj and tw
)
v
)
(
1.5
(
gt Gate trigger voltage
at Tj and tw
gate trigger
VGT DC
voltage at 25°C
tw
)
(
gate trigger
VGT DC
voltage at 25°C
vgt
10
Tj= –40°C
1 element operation
2 elements operation
75
3 elements operation
(MODE – )
2.0
0.5
0.5 1
Tj= –20°C
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
vgt (Typical)
(MODE – )
1.0
1.5
100
RMS on-state current IT(RMS) (A)
Pulse trigger temperature Characteristics
1.0
iGF (A)
0
)
0.5
0
gate trigger
IGT DC
current at 25°C
0
0.5
125
θ1
0
12
150
1 element operation
2 elements operation
125
θ1
8
IT(RMS) – Ta Ratings
150
2.0
4
Gate trigger current
IGT (mA)
Gate current
Number of cycle
Full-cycle sinewave
Conduction angle
θ=θ1+ θ2 =360°
0
See graph at the upper right
3.6
3.0
0
0
vT ( V )
IT(RMS) – PT(AV) Characteristics
2
2
0
On-state voltage
Tj=25°C
vGF (V)
8
4
W
=1
0.5
1.0
10 ms
1cycle
Gate voltage
Tj=25°C
10
M
Surge on-state current ITSM (A)
iT (A)
10
Initial junction temperature
Tj=125°C
ITSM
PG
On-state current
15
12
1
Average on-state power PT(AV) (W)
Gate Characteristics
ITSM Ratings
50
Gate trigger voltage VGT (V)
vT – iT Characteristics (max)
–20°C
25°C
1
75°C
125°C
0.1
0.5 1
10
Pulse width
100
t w (µs)
1000
Tj= – 40°C
–20°C
1
25°C
75°C
125°C
0.1
0.5 1
10
Pulse width
100
1000
t w (µs)
Transient thermal resistance
Characteristics
Transient thermal resistance
rth (°C/W)
200
1 element operation
100
Junction to
operating
environment
Junction to
T2 Lead
10
1
1
10
10 2
10 3
10 4
10 5
t, Time (ms)
63