TO-3PF 25A Triac TM2541B-L, TM2561B-L ■ Features External Dimensions ●Isolation voltage: VISO=2000V(AC, 1min.) 3.35± 0.2 1.6 3.3 a b (16.2) ) 23± 0.3 5.5± 0.2 9.5± 0.2 ●RMS on-state current: IT(RMS)=25A ●Gate trigger current: IGT=30mA max (MODE , , 5.5± 0.2 3.45± 0.2 3.2± 0.2 (Unit: mm) ●Repetitive peak off-state voltage: VDRM=400, 600V +0.2 1.75–0.1 +0.2 2.15 –0.1 ●UL approved type available +0.2 1.05–0.1 5.45± 0.1 5.45± 0.1 +0.2 0.65–0.1 15.6± 0.2 1.5 4.4 1.5 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) a. Part Number b. Lot Number Weight: Approx. 6.5g (1) (2) (3) ■Absolute Maximum Ratings Parameter Symbol Ratings TM2541B-L TM2561B-L Unit Conditions Repetitive peak off-state voltage VDRM V RGK= ∞, Tj= –40°C to +125°C RMS on-state current IT(RMS) 25 A Conduction angle 360°, Tc=84°C Surge on-state current ITSM 240 A 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C Peak gate voltage VGM 10 V f 50Hz, duty 10% Peak gate current IGM 2 A f 50Hz, duty 10% Peak gate power loss PGM 5 W f 50Hz, duty 10% PG(AV) 0.5 W Average gate power loss 400 600 Junction temperature Tj – 40 to +125 °C Storage temperature Tstg – 40 to +125 °C Isolation voltage VISO 2000 Vrms 50Hz Sine wave, RMS, Terminal to Case, 1 min. ■Electrical Characteristics Parameter Symbol Off-state current IDRM On-state voltage VTM Ratings min typ max 0.3 2.0 Conditions mA VD=VDRM, RGK= ∞, Tj=25°C 0.1 1.3 0.8 Gate trigger voltage Unit VGT V VD=VDRM, RGK= ∞, Tj=125°C ITM=20A, TC=25°C 0.8 2.0 0.8 2.0 V VD=6V, RL=10Ω, TC=25°C Gate trigger current 19 IGT 22 Holding current Rate-of-rise of off-state commutation voltage Thermal resistance 50 VGD 30 30 (dv/dt)c Rth – – – + + + T2 , G mA VD=6V, RL=10Ω, TC=25°C + – – – – + T2 , G T2 , G T2 , G V 0.2 mA 40 IH – T2 , G T2 , G 30 50 Gate non-trigger voltage + + T2 , G 1.0 17 + T2 , G 2.0 10 1.5 VD=1/2×VDRM, Tj=125°C Tj=25°C V/µs VD=400V, Tj=125°C °C/W Junction to case TM2541B-L, TM2561B-L 50 240 Surge on-state current ITSM (A) 280 iT (A) Tj =125°C Tj =25°C 10 5 1 0.8 1.0 1.2 1.4 IT(RMS) – PT(AV) Characteristics Initial junction temperature Tj=125°C ITSM 10 ms 1cycle 200 160 120 80 40 1.6 1.8 2.0 2.2 2.4 5 10 50 VGM =10V 10 PGM =0.5W 25°C VGT=2V 1 25 VGD=0.2V 0.1 0 20 24 26 1 10 RMS on-state current IT(RMS) (A) Gate trigger current IGT (mA) Mode 50 10 5 100 Junction temperature Tj (°C) 125 4 8 12 16 20 24 26 (VD =6V RL =10 Ω) 1000 10000 iGF (mA) 1.0 0.8 0.6 0.4 0.2 –40 0 25 50 75 100 125 Junction temperature Tj (°C) rth( j-c) – t Characteristics Transient thermal resistance rth (j-c) (°C/W) (VD =6V RL =10 Ω) 75 100 Gate current IGT temperature characteristics 50 PG(AV) =0.5W –40°C VGT=2.3V IGM =2A 50 25 0 1.2 25°C IGT=30mA 75 0 4 (Typical) –40°C IGT=75mA vGF (V) Gate voltage Case temperature TC (°C) 100 1 –40 8 Mode 125 100 12 VGT temperature characteristics 100 (Typical) 16 RMS on-state current IT(RMS) (A) Full-cycle sinewave Conduction angle :360° 16 20 100 Gate Characteristics 12 24 Number of cycle 150 8 28 Conduction angle :360° 0 1 vT ( V ) IT(RMS) – Tc Ratings 4 Full-cycle sinewave 0 On-state voltage 0 32 Gate trigger voltage VGT (V) On-state current ITSM Ratings 100 Average on-state power PT(AV) (W) vT – iT Characteristics (max) 5 1 0.5 0.1 1 10 102 103 104 105 t, Time (ms) 51