TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series ■ Features External Dimensions A 0.8±0.2 0.3 16.9± ●Gate trigger current: IGT=10mA max 8.4±0.2 0.2 4.0± ●Average on-state current: IT(AV)=3A 4.2±0.2 C 0.5 2.8 10.0±0.2 φ 3.3±0.2 (Unit: mm) ●With built-in Avalanche diode 1.35±0.15 0.2 ●Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) a b 3.9± 13.0 min G 1.35± +0.2 0.85 – 0.1 0.15 +0.2 0.45 – 0.1 2.54 2.54 K 2.4±0.2 2.2±0.2 (1). Cathode (K) (2). Anode (A) (3). Gate (G) a. Part Number b. Lot Number Weight: Approx. 2.1g (1) (2) (3) ■Absolute Maximum Ratings Parameter Symbol Ratings Unit Repetitive peak off-state voltage VDRM ✽ V Tj=–10 to +125°C, RGK=1kΩ 50Hz Half-cycle sinewave, 180°, Continuous current, Tc = 92°C Average on-state current Conditions IT (AV) 3.0 A RMS on-state current IT (RMS) 4.7 A Surge on-state current ITSM 60 A I2t 18 A2 • sec Peak forward gate voltage VFGM 1.5 V f 50Hz, duty Peak reverse gate voltage VRGM 5.0 V f 50Hz f 50Hz, duty Squared rated current and time product Peak gate power loss PGM 5.0 W PG (AV) 0.5 W Junction temperature Tj Tstg –10 to +125 –40 to +125 °C Storage temperature Isolation voltage VISO 1500 V Average gate power loss 50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj=125°C 2ms t 10ms 10% 10% °C 50Hz Sine wave, RMS, Terminal to case, 1min. ✽VDRM Rank -C -F -G -J -K -L -M -N -O Ratings 20 35 45 80 100 120 145 170 190 ■Electrical Characteristics Parameter Symbol Off-state current IDRM Breakover voltage VBO (Tj=25°C, unless otherwise specified) Ratings min typ Unit max mA Tj=125°C, VD=VDRM, RGK=1kΩ 100 µA Tj=25°C, VD=VDRM, RGK=1kΩ ✽ V Breakover current IBO 15 mA On-state voltage VTM 1.4 V Gate trigger voltage VGT 1.0 V Gate trigger current IGT 0.2 10 mA Gate non-trigger voltage VGT 0.1 15 mA Holding current 0.2 Thermal resistance ITM=5A VD=6V, RL=10Ω VD=VDRM, Tj=125°C, RGK=1kΩ V IH Critical rate-of-rise of off-state voltage Conditions 1.0 dv/dt 40 Rth 5.0 RGK=1kΩ, Tj=125°C V/µS VD=VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF °C/W Junction to case ✽VBO -C -F -G -J -K -L -M -N -O min 27 50 60 90 115 140 163 185 210 typ 30 55 65 100 125 150 175 200 225 max 33 60 70 110 135 160 187 215 240 Rank Ratings Application example Reg. Overvoltage detection Input TFD312S Load Overcurrent detection 26 TFD312S series 1 2.0 3.0 On-state voltage 20 12 10 1 0 0 Tj = –40°C 10 20 Gate trigger current IGT (mA) 8 6 4 See graph at the upper right 2 1 5 10 50 0 100 0 1 2 Gate current Number of cycle 3 iGF (A) IT(AV) – Tc Ratings Half wave, single phase θ : Conduction angle Half wave, single phase θ : Conduction angle 3 2 75 DC 30 ° 60 ° 4 0° θ 180° 100 180° 90 ° 5 125 90° 120° 12 0° 18 6 60° 0° 0° θ 180° Case temperature TC (°C) DC 7 50 25 1 1 2 3 4 5 0 6 30 1.0 10 2 10 4 5 10 3 10 5 IH temperature Characteristics (Typical) 1 10 2 10 (Typical) 0 25 50 75 100 Junction temperature Tj (°C) 125 6 4 2 0 25 50 75 25 50 75 100 125 10 rth (°C/W) 8 0 –40 0 Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance 0 – 40 (VD=6V, RL=10Ω) 10 Gate trigger current IGT (mA) 0.2 4 Junction temperature Tj (°C) IGT temperature Characteristics 0.4 6 t w (µs) (Typical) 0.6 8 0 –40 10 3 VGT temperature Characteristics 0.8 10 2 Pulse width (VD=6V, RL=10Ω) 12 1 0.2 0.5 (RGK=1kΩ) 14 0.5 Pulse width tw (µs) 1.0 6 igt Tj =– 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C ) trigger current igt (Gate ) at Ta and tw ( gate trigger IGT DC current at 25°C Tj =– 40°C –20°C tw 0°C 25°C 50°C 75°C 100°C 125°C 0.5 0.5 1 3 Pulse trigger temperature Characteristics igt (Typical) vgt 1.5 2 Average on-state current IT(AV) (A) Pulse trigger temperature Characteristics vgt (Typical) 2.0 1 0 Holding current IH (mA) 0 Average on-state current IT(AV) (A) Gate trigger voltage VGT (V) 14 Tj = –20°C vGF (V) Gate voltage 40 4.0 θ= Average on-state power PT(AV) (W) 60 2 150 8 ) 16 1 cycle vT ( V ) IT(AV) – PT(AV) Characteristics ( 18 0 0.3 1.0 gate trigger VGT DC voltage at 25°C 20 I TSM 10 ms 80 θ =30° iT (A) Surge on-state current ITSM (A) 5 0.5 trigger voltage vgt ( Gate ) at Ta and tw Initial junction temperature Tj=125°C Tj=125°C 10 0 Gate Characteristics 100 Tj=25°C 50 On-state current ITSM Ratings Tj =25°C 100 Gate trigger voltage VGT (V) vT – iT Characteristics (max) 100 Junction temperature Tj (°C) 125 5 1 0.5 0.1 1 10 10 2 10 3 10 4 t, Time (ms) 27