THYRISTOR MODULE PWB200AA PWB200AA is a Thyristor module suitable for low voltage, 3 phase recifier applications. ● IT（AV）200A（each device） Surge Current 6000 A（60Hz） ● Easy Construction ● Non-isolated. Mounting base as common Anode terminal 108 93±0.3 ● high 18 2 1 2-φ6.5 34 13 3 （Applications） Welding power Supply Various DC power Supply 20.5 26 3-M6 26 K3 3 K2 2 K1 K2 1 G2 30max 6-♯110TAB NAME PLATE K1 G1 G3 K3 A Unit：A ■Maximum Ratings Symbol Ratings Item PWB200AA30 PWB200AA40 Unit VRRM Repetitive Peak Reverse Voltage 300 400 V VRSM Non-Repetitive Peak Reverse Voltage 360 480 V VDRM Repetitive Peak Off-State Voltage 300 400 V Symbol Item IT（AV） IT（RMS） ITSM I2t Conditions Ratings Unit Average On-State Current Single phase, half wave, 180°conduction, Tc：121℃ 200 A R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：121℃ 314 A Surge On-State Current 1／cycle, 2 50Hz/60Hz, peak value, non-reqetitive I2t 5400/6000 1499400 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 1 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage（Forward） 10 V VRGM Peak Gate Voltage（Reverse） 5 V 50 A/μs IG＝200mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs di/dt Tj Critical Rate of Rise of On-State Current Operating Junction Temperature −40 to ＋150 ℃ Tstg Storage Temperature Mounting torque −40 to ＋125 ℃ Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M6） 4.7（48） N･ｍ （㎏f･B） Recommended Value 2.5-3.9（25-40） Mass 280 g ■Electrical Characteristics Symbol Item IDRM Repetitive Peak Off-State Current, max. at VDRM, Single phase, half wave, Tj＝150℃ IRRM Repetitive Peak Reverse Current, max. at VDRM, Single phase, half wave, Tj＝150℃ VTM Peak On-State Voltage, max. On-State Current 630A, Tj＝25℃Inst. measurement 1.20 V IGT Gate Trigger Current, max. Tj＝25℃，IT＝1A，VD＝6V 150 mA VGT Gate Trigger Voltage, max. Tj＝25℃，IT＝1A，VD＝6V 2 V VGD Non-Trigger Gate, Voltage. min. Tj＝150℃，VD＝1／2VDRM 0.25 V tgt Turn On Time, max. IT＝200A，IG＝200mA，Tj＝25℃， VD＝1／2VDRM，dIG/dt＝1A/μs Critical Rate of Rise of Off-State Voltage, min. Tj＝150℃，VD＝2／3VDRM，Exponential wave. Holding Current, typ. Tj＝25℃ dv/dt IH Rth（j-c） Thermal Impedance, max. Conditions Junction to case（1／3Module） Ratings Unit 60 mA 60 mA 10 μs 200 V/μs 70 mA 0.12 ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ; ２ Av er ag e ５ Ga te ２ Po we （ r Peak Gate Current（３A） Peak Forward Gate Voltag（10V） １０１ Gate Voltage（V） On-State Voltage max Gate Characteristics P Po eak we G （ r ate 10 W ） 1W ） １０ ２ １０１ 25℃ 150℃ ５ −30℃ On-State Current（A） ２ ５ ２ １０ ２ ５ ３ １０ ５ ２ １０２ ５ １０１ ０ ５ ２ １０３ ２ Maximum Gate Voltage that will not terigger any unit ２ １． ０ Power Dissipation（W） 直流 D.C. Allowable Case Temperature（℃） Average On-State Current Vs Power Dissipation （Single phase half wave） １５０ Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） θ＝180゜ θ：Conduction Angle １１０ 2 θ＝60゜ θ＝30゜ 。 360 １００ １００ : Conduction Angle ０ ０ １００ 2 。 360 １２０ θ＝120゜ θ＝90゜ Per one element ２００ ９０ θ＝30゜ θ＝90゜ θ＝180゜ θ＝60゜ θ＝120゜ ０ ３００ Transient Thermal Impedance θj-c（℃/W） Surge On-State Current Rating （Non-Repetitive） ２００ ０． １４ ３００ ４００ Transient Thermal Impedance Junction to Case ０． １２ Per one element Tj＝25℃ ５０００ １００ 直流 D.C. Average On-State Current（A） Average On-State Current（A） Surge On-State Current（A） Per one element １３０ ２００ ２． ０ １４０ ３００ ６０００ １． ５ On-State Voltage（V） Gate Current（mA） ４００ PWB200AA ０． １０ ４０００ ０． ０８ ６０Hz ３０００ ０． ０６ ２０００ ０． ０４ １０００ ０ １ Per one element ０． ０２ ２ ５ １０１ ２ Time（cycles） ５ １０２ ０． ００ １０ー３ ２ ５ １０ー２ ２ ５ １０ー１ ２ Time t（sec） ５ １００ ２ ５ １０１