THYRISTOR MODULE（NON-ISOLATED TYPE） PWB100A PWB100A is a Thyristor module suitable for low voltage, 3 phase recifier applications. ● IT(AV)100A (each device) Surge Current 3500 A (60Hz) ● Easy Construction ● Non-isolated. Mounting base as common Anode terminal 93.5max 80 K3 3 K1 1 K2 G2 K1 G1 G3 K3 16.5 （Applications） Welding power Supply Various DC power Supply 2-φ6.5 K2 2 （13） 26.5max ● High 23 23 3-M5 K3 3 K2 2 K1 K2 1 G2 30max （21） 6-♯110TAB K1 G1 G3 K3 A Unit：A ■Maximum Ratings Symbol Ratings Item PWB100A30 PWB100A40 Unit VRRM Repetitive Peak Reverse Voltage 300 400 V VRSM Non-Repetitive Peak Reverse Voltage 360 480 V VDRM Repetitive Peak Off-State Voltage 300 400 V Symbol Item IT（AV） IT（RMS） ITSM I2t Conditions Ratings Unit Average On-State Current Single phase, half wave, 180°conduction, Tc：114℃ 100 A R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：114℃ 157 A Surge On-State Current 1 ／2cycle, 50Hz/60Hz, peak value, non-repetitive I2t 3200/3500 51000 A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 1 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage (Forward) 10 V VRGM Peak Gate Voltage (Reverse) 5 V 50 A/μs di／dt Critical Rate of Rise of On-State Current Tj Operating Junction Temperature Tstg IG＝200mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs ℃ −30 to ＋125 ℃ Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） N･ｍ （㎏f･B） Storage Temperature Mounting Torque −30 to ＋150 Mass 170 g ■Electrical Characteristics Symbol Item Conditions Ratings Unit IDRM Repetitive Peak Off-State Current, max. at VDRM, single phase, half wave, Tj＝150℃ 15 mA IRRM Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj＝150℃ 15 mA VTM Peak On-State Voltage, max. On-State Current 310A, Tj＝25℃ Inst. measurement IGT／VGT Gate Trigger Current/Voltage, max. Tj＝25℃，IT＝1A，VD＝6V VGD Non-Trigger Gate, Voltage. min. Tj＝150℃，VD＝1／2VDRM tgt Turn On Time, max. IT＝100A，IG＝200mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs dv／dt IH Critical Rate of Rise of Off-State Voltage, min. Tj＝150℃, Holding Current, typ. Tj＝25℃ Rth（j-c） Thermal Impedance, max. SanRex VD＝2／3VDRM, Exponential wave. Junction to case（1／ 3 Module） 1.20 150/2 0.25 V mA/V V 10 μs 50 V/μs 70 0.3 mA ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ;; ;; Gate Characteristics Peak Forward Gate Voltage（10V） Av ５ er ag eG ２ Po 25℃ １００ 150℃ ５ ２ we （ r 1W ） ） –30℃ Maximum Gate Voltage that will not terigger any unit １０１ １０１ ２ ５ １０２ ２ ５ １０３ ５ ２ １０２ ５ ２ ０ ５ ２ 0． ５ １ １． ５ ２ ２． ５ ３ Gate Current（mA） On-State Voltage（V） Average On-State Current Vs Power Dissipation （Single phase half wave） Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） D.C. Power Dissipation（W） １０３ １０１ １５０ ２００ Per one element ５０ １００ 。 360 : Conduction Angle １００ １５０ ２００ θ＝30゜ ９０ ０ ２５０ 60Hz ２０００ １ ５００ ２ ５ １０ ２０ Time（cycles） ５０ １００ Transient Thermal Impedance θj-c（℃/W） Surge On-State Current（A） Per one element Tj＝25℃ ２５００ ０ １ θ＝180゜ θ＝30゜ θ＝120゜ D.C. D.C. ２０ ４０ ６０ ８０ １００ １２０ １４０ １６０ １８０ ２００ ２２０ Average On-State Current（A） Surge On-State Current Rating （Non-Repetitive） ３０００ θ＝90゜ θ＝60゜ Average On-State Current（A） ３５００ θ: Conduction Angle １１０ 2 ５０ 。 360 １２０ θ＝30゜ ０ ０ 2 １３０ θ＝120゜ θ＝90゜ θ＝60゜ １００ Per one element １４０ θ＝180゜ １５０ １６０ Allowable Case Temperature（℃） ２５０ ate On-State Voltage max ２ Pe Po ak G we a （ r 1 te 0W On-State Current（A） １０１ Gate Voltage（V） ５ Peak Gate Currennt（3A) ２ PWB100A ０． ５ Transient Thermal Impedance Per one elememt ０． ４ Junction to case ０． ３ ０． ２ ０． １ ０ １０ー３ ２ ５ １０ー２ ２ ５ １０ー１ ２ ５ １００ ２ Time t（sec） ５ １０１