THYRISTOR MODULE（NON-ISOLATED TYPE） PWB130A PWB130A is a Thyristor module suitable for low voltage, 3 phase recifier applications. ● IT(AV)130A (each device) Surge Current 3500 A (50/60Hz) ● Easy Construction ● Non-isolated. Mounting base as common Anode terminal 93.5max 80 K3 3 K1 1 K2 G2 K1 G1 G3 K3 16.5 （Applications） Welding power Supply Various DC power Supply 2-φ6.5 K2 2 （13） 26.5max ● high 23 23 3-M5 K3 3 K2 2 K1 K2 1 G2 30max （21） 6-♯110TAB K1 G1 G3 K3 A Unit：A ■Maximum Ratings Symbol Item Ratings PWB130A20 PWB130A30 PWB130A40 Unit VRRM Repetitive Peak Reverse Voltage 200 300 400 V VRSM Non-Repetitive Peak Reverse Voltage 240 360 480 V VDRM Repetitive Peak Off-State Voltage 200 300 400 V Symbol Item IT（AV） IT（RMS） ITSM I2t Conditions Ratings Unit Average On-State Current Single phase, half wave, 180°conduction, Tc：112℃ 130 A R.M.S. On-State Current Single phase, half wave, 180°conduction, Tc：112℃ 204 A Surge On-State Current 1 ／2cycle, 3200/3500 51000 50Hz/60Hz, peak value, non-repetitive I2t A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 1 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage (Forward) 10 V VRGM Peak Gate Voltage (Reverse) 5 V 50 A/μs di/dt Tj Critical Rate of On-State Current Tstg Storage Temperature IG＝200mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs Operating Junction Temperature Mounting torque −30 to ＋150 ℃ −30 to ＋125 ℃ Mounting（M6） Recommended 2.5-3.9（25-40） 4.7（48） Terminal（M5） Recommended 1.5-2.5（15-25） 2.7（28） N･ｍ （kgf･B） Mass 170 g ■Electrical Characteristics Symbol Item Conditions Mix. Ratings Typ. Min. Unit 30 mA IDRM Repetitive Peak Off-State Current, max. at VDRM, single phase, half wave, Tj＝150℃ IRRM Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj＝150℃ 30 mA VTM Peak On-State Voltage, max. On-State Current 410A, Tj＝150℃ Inst. measurement 1.2 V IGT Gate Trigger Current, max. Tj＝25℃，IT＝1A，VD＝6V 150 mA/V VGT Gate Trigger Voltage, max. Tj＝25℃，IT＝1A，VD＝6V 2 VGD Non-Trigger Gate, Voltage. min. Tj＝150℃，VD＝1／2VDRM mA/V V tgt Turn On Time, max. IT＝100A，IG＝200mA，Tj＝25℃， VD＝1／2VDRM，dIG/dt＝1A/μs 10 μs Critical Rate of Rise of Off-State Voltage, min. Tj＝150℃，VD＝2／3VDRM，Exponential wave. Holding Current, typ. Tj＝25℃ dv/dt IH Rth（j-c） Thermal Impedance, max. Junction to case（1／ 3 Module） 0.25 V/μs 50 70 mA 0.2 ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ; Gate Characteristics Peak （10V） Peak Forward Forward Gate Gate Voltag Voltag （10V） ５ Av er ag e ２ 1W ） -30℃ ５ Maximum Gate Voltage that will not terigger any unit ２ １０ ２ ５ １０２ ２ １０３ ５ ５ Maximum Maximum Tj=150℃ ２ １０２ ５ ２ １０１ ５ ０ ５ ２ ０． ５ １． ０ １． ５ ２． ０ ２． ５ ３． ０ Gate Current（mA） On-State Voltage（V） Average On-State Current Vs Power Dissipation （Single phase half wave） Average On-State Current Vs Maximum Allowable Case Temperature（Single phase half wave） D.C. Power Dissipation（W） １０３ １５０ ２００ Per one element ５０ １００ 。 360 : Conduction Angle １００ １５０ ２００ θ＝30゜ ９０ ０ ２５０ 60Hz ２０００ １ ５００ ２ ５ １０ ２０ Time（cycles） ５０ １００ Transient Thermal Impedance θj-c（℃/W） Surge On-State Current（A） Per one element Tj＝25℃ ２５００ ０ １ θ＝180゜ θ＝30゜ θ＝120゜ D.C. D.C. ２０ ４０ ６０ ８０ １００ １２０ １４０ １６０ １８０ ２００ ２２０ Average On-State Current（A） Surge On-State Current Rating （Non-Repetitive） ３０００ θ＝90゜ θ＝60゜ Average On-State Current（A） ３５００ 360 θ: Conduction Angle １１０ 2 ５０ 。 １２０ θ＝30゜ ０ ０ 2 １３０ θ＝120゜ θ＝90゜ θ＝60゜ １００ Per one element １４０ θ＝180゜ １５０ １６０ Allowable Case Temperature（℃） ２５０ Po we （ r 25℃ 150℃ １０ Ga te On-State Voltage max ２ P Po eak we G （ r ate 10 W ） On-State Current（A） １０ Gate Voltage（V） ５ Peak Gate Current（3V） ２ PWB130A ０． ３ ０． ２ Transient Thermal Impedance Junction to Case Per one element ０． １ ０ ー３ １０ ２ ５ １０ー２ ２ ５ １０ー１ ２ ５ １００ ２ Time t（sec） ５ １０１