TRANSISTOR MODULE（Hi-β） QCA200BA60 UL;E76102 （M） 15 C1 25.0 3-M6 L=10max AMP110 t=0.5 E1 B1 Unit：A （Tj＝25℃ unless otherwise specified） Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage −IC E1 B1 30.0max E2 C2E1 ■Maximum Ratings IC B1X 14.0 B2 E2 B1X Symbol B2 E2 25.0 B2X C1 33.0max 24.0max （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application E2 63.0max 15 C2E1 B2X 37.0max VCEX＝600V saturation voltage for higher efficiency. ● ULTRA HIGH DC current gain hFE. hFE≧750 ● Isolated mounting base ● VEBO 10V for faster switching speed. ● Low 4-φ6.5 7.57.56.06.0 ● IC＝200A, 108max 93±0.5 48±0.5 QCA200BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode (trr：200ns). The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction, Collector Current Conditions Ratings QCA200BA60 VBE＝−2V IB Base Current Total power dissipation 600 V 600 V 10 （ ）pw≦1ms Reverse Collector Current PT Unit TC＝25℃ V 200（400） A 200 A 12 A 1250 W Tj Junction Temperature −40 to ＋150 ℃ Tstg Storage Temperature −40 to ＋125 ℃ VISO Isolation Voltage Mounting Torque A.C.1minute 2500 Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） N･m (㎏f･B) 470 g Mass Typical Value ■Electrical Characteristics Symbol Item Conditions ICBO Collector Cut-off Current VCB＝VCBO IEBO Emitter Cut-off Current VEB＝VEBO VCEO（SUS） Collector Emitter Sustaning VCEX（SUS） Voltage Ratings Min. Typ. Max. Unit 2.0 mA 800 mA Ic＝1A 450 Ic＝40A，IB2＝−8A 600 D.C. Current Gain Ic＝200A，VCE＝2.5V 750 VCE（sat） Collector-Emitter Saturation Voltage Ic＝200A，IB＝0.26A 2.5 V VBE（sat） Base-Emitter Saturation Voltage Ic＝200A，IB＝0.26A 3.0 V hFE ton ts On Time Switching Time tf VECO trr Rth（j-c） V Storage Time Fall Time 2.0 Vcc＝300V，Ic＝200A IB1＝0.4A，IB2＝−4A 8.0 Collector-Emitter Reverse Voltage Ic＝−200A Reverse Recovery time Vcc＝300V, Ic＝−200A, −di/dt＝200A/μs, VBE＝−5V Thermal Impedance (junction to case) Transistor part 0.1 Diode part 0.3 SanRex μs 2.0 1.8 V 200 ns ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] QCA200BA60 ２ D.C. Current Gain Switching Time ton ts t（μs） f １０４ DC Current Gain hFE １０１ Typical VCE 5V VCE 2.5V ５ Tj 125℃ Collector Current Vs Switching Time Typical Tj＝25℃ ５ ２ ts １００ ２ １０３ Tj 25℃ ５ ２ ５ １０１ ２ １０２ ５ ５ ２ tf ton IB1＝0.4A IB2＝−4.0A VCC＝300V １０−１ ０ ２ １００ Collector Current Ic（A） Forward Bias Safe Operating Area 1 0μ 00μs s 50 ２ 1m １０２ s Pu 50μ ls s e Wid ４００ e Collector Current Ic（A） Collector Current Ic（A） ５ ５ ２ １０１ ５ ２ １００ ５ Non-Repetitive Tc 25℃ ５ １０１ Reverse Bias Safe Operating Area IB2＝−3.5A ３００ ２００ １００ Tj＝125℃ ２ ５ １０２ ２ ５ ０ ０ １０３ １００ Collector Reverse Current -Ic（A） Derating Factor（%） Collector Current Derating Factor IS/B Limited ５０ PTLimited ０ ０ ５０ １００ １０３ ２ １０２ ５ trr Qrr ５ ０ ２ 10−１ ５ １００ ２００ Reverse Collector Current -Ic（A） ７００ Tj＝25℃ ５ ２ １０１ ５ ２ １００ ５ ３００ Transient Thermal Impedance θj-c（℃/W） １００ di/dt＝−200A/μs Typical VBE＝−5V Tj＝25℃ １００ ６００ Typical ０ Reverse Recovery Time trr（μC） Reverse Recovery Charge Qrr（μC） Reverse Recovery Current Irr（A） ５ ２ ２ ５００ １． ０ ２． ０ ３． ０ Emitter-Collector Voltage VECO（V） ２ ５ ４００ ５ １５０ Reverse Recovery Characteristics １０１ ３００ Forward Voltage of Free Wheeling Diode Case Temperature（℃） ５ ２００ Collector-Emitter Voltage VCE（V） Collector-Emitter Voltage VCE（V） １００ ２００ Collector Current Ic（A） ５ Maximum Transient Thermal Impedance Characteristics max ２ １０−１ 50msec∼50sec ５ ２ １０−２ ２ ００ 200 μsec∼50msec ５ ２ ５ ２ ５ １０−３ ２ ５ １０−２ ２ ５ １０−１ ２ ５ １００ ５ １０１ ５ ２ ２ Time t（sec） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]