MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • • • • • IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4–φ6.5 93±0.25 B2X B2 6 E2 9 B1X C1 62 C1 C2E1 10.5 6 B1 E1 15 30 E2 48±0.25 E2 B2 B2X C2E1 E1 B1 B1X 8 14 17 8 17 3 Tab#110, t=0.5 9.5 8 LABEL 37 17 1.8 16 3 21.5 30 3–M6 25 25 7 8 15.3 E2 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current DC –IC Collector reverse current DC (forward diode current) 150 A PC Collector dissipation TC=25°C 1000 W IB Base current DC 8 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1500 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M6 — Mounting torque Mounting screw M6 — Typical value Weight ELECTRICAL CHARACTERISTICS 7 V 150 A 2500 V 1.96~2.94 N·m 20~30 kg·cm 1.96~2.94 N·m 20~30 kg·cm 470 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V — — 2.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open — — 2.0 mA IEBO Emitter cutoff current VEB=7V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.5 V –VCEO Collector-emitter reverse voltage –IC=150A (diode forward voltage) — — 1.8 V hFE DC current gain IC=150A, VCE=2.8V/5V 75/100 — — — — — 3.0 µs Switching time VCC=600V, IC=150A, IB1=–IB2=3A — — 15 µs — — 3.0 µs Transistor part (per 1/2 module) — — 0.125 °C/ W Diode part (per 1/2 module) — — 0.6 °C/ W Conductive grease applied (per 1/2 module) — — 0.075 °C/ W IC=150A, IB=3A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25°C DC CURRENT GAIN hFE IB=1.5A 160 IB=0.8A IB=0.4A 120 IB=200mA 80 IB=100mA 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 3 7 5 3 2 VCE=2.8V Tj=25°C 10 0 7 5 4 3 2 10 –1 1.8 2.2 2.6 3.0 BASE-EMITTER VOLTAGE 10 2 7 5 3 2 Tj=25°C Tj=125°C 3.4 COLLECTOR CURRENT IC (A) 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 IC=200A 2 IC=150A IC=100A 0 10 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) 2 3 4 5 7 10 2 2 3 4 5 7 10 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) SWITCHING TIME 3 IB=3A Tj=25°C Tj=125°C COLLECTOR CURRENT IC (A) 5 4 VCE(sat) 10 –1 10 1 VBE (V) Tj=25°C Tj=125°C VBE(sat) 10 0 7 5 4 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VCE=2.8V VCE (V) VCE (sat), VBE (sat) (V) 10 1 7 5 4 3 2 1 VCE=5.0V 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 5 COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) BASE CURRENT IB (A) 10 4 7 5 3 2 10 1 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 200 10 2 7 VCC=600V 5 IB1=–IB2=3A Tj=25°C 3 Tj=125°C 2 10 1 7 5 3 2 10 0 7 5 3 2 ts tf ton 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 320 VCC=600V IC=150A IB1=3A ts 10 1 7 5 4 3 2 tf 10 0 10 –1 Tj=25°C Tj=125°C 2 3 4 5 7 10 0 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) 280 200 BASE REVERSE CURRENT –IB2 (A) 120 80 40 600 10 1 7 5 3 2 TC=25°C NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0.12 0.10 0.08 0.06 0.04 0.02 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) VCE (V) 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) 0.14 1000 80 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 0.16 800 SECOND BREAKDOWN AREA 90 DERATING FACTOR (%) µs 200 s 1m C COLLECTOR CURRENT IC (A) 400 100 COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 200 DERATING FACTOR OF F. B. S. O. A. tw=50µs 100µs D 10 2 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 Tj=125°C 160 0 2 3 4 5 7 10 1 IB2=–2A IB2=–5A 240 10 3 7 5 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 Tj=25°C Tj=125°C 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 1600 1400 Irr (A), Qrr (µc) 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 3 2 10 2 VCC=600V IB1=–IB2=3A Tj=25°C Tj=125°C Irr Qrr 10 1 trr (µs) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) trr 10 1 10 0 7 5 3 2 10 0 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 Zth (j–c) (°C/ W) 0.8 0.6 0.4 0.2 0 10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999