TRANSISTOR MODULE Hi- SQD300BA60 UL;E76102 M SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 300A, VCEX 600V Low saturation voltage for higher efficiency. ULITRA HIGH DC current gain hFE. hFE 750 Isolated mounting base VEBO 10V for faster switching speed. Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Ratings Conditions SQD300BA60 Unit VCBO Collector-Base Voltage 600 V VCEX Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage IC IC VBE 2V 10 Collector Current =pw 1ms 300 600 300 Reverse Collector Current IB Base Current PT Total power dissipation V A TC 25 A 18 A 1380 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting Torque 150 M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M4 Recommended Value 1.0 1.4 10 14 Typical Value 1.5 15 460 Mass V N m ( f B) g Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB VCBO IEBO Emitter Cut-off Current VEB VEBO VCEO SUS Ratings Min. Typ. Max. Unit 4.0 mA 1200 mA 450 Collector Emitter Sustaning Voltage Ic 1A 10A 600 DC Current Gain Ic 300A VCE 2.5V 750 sat Collector-Emitter Saturation Voltage Ic 300A IB 400mA 2.5 V VBE sat Base-Emitter Saturation Voltage Ic 300A IB 400mA 3.0 V VCEX SUS hFE VCE ton ts tf VECO trr Rth j-c 55 Ic 60A IB2 V On Time Switching Time Storage Time Fall Time 2.0 Vcc 300V Ic 300A 6A IB1 0.6A IB2 Collector-Emitter Reverse Voltage Ic Reverse Recovery time Vcc 300V, Ic 300A, di/dt 300A/ s, VBE Transistor part Thermal Impedance (junction to case) 8.0 1.8 300A Diode part s 2.0 5V 200 V ns 0.09 0.3 /W SQD300BA60 56