MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE QM75TF-HB • • • • • IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102±0.3 4–φ5.5 6 14 6 14 6 17 7–M4 BvP BuP BwP EwP V W N 24.5 U 30 16.5 BwNEwN EwP BvN BuN EuN BwN EvN EwN N N U V W 6.5 17 N EvP EuP P BwP 43 BvN EvN 12 BuN EuN 30 74±0.25 P 91±0.3 P P 27 BvP EvP BuP EuP 22 20 20 80±0.25 22 2 11 LABEL 7 29.5 30+1.5 – 0.2 8.1 Tab#110, t=0.5 Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 75 A –IC Collector reverse current DC (forward diode current) 75 A PC Collector dissipation TC=25°C 350 W IB Base current DC 4.5 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 750 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Charged part to case, AC for 1 minute Main terminal screw M4 — Mounting torque Mounting screw M5 — Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N·m 10~15 kg·cm 1.47~1.96 N·m 15~20 kg·cm 660 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 75 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.0 V –VCEO Collector-emitter reverse voltage –IC=75A (diode forward voltage) — — 1.8 V hFE DC current gain IC=75A, VCE=2.5V 750 — — — — — 2.0 µs Switching time VCC=300V, IC=75A, IB1=150mA, IB2=–1.5A — — 8.0 µs — — 3.0 µs Transistor part (per 1/6 module) — — 0.35 °C/ W Diode part (per 1/6 module) — — 1.3 °C/ W Conductive grease applied (per 1/6 module) — — 0.2 °C/ W IC=75A, IB=100mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 200 2 DC CURRENT GAIN hFE 160 A IB=200m A m IB=100 120 IB=50mA 80 IB=20mA IB=10mA 40 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 VCE=2.5V Tj=25°C 10 –1 7 5 4 3 2 10 –2 2.0 2.4 2.8 3.2 3.6 BASE-EMITTER VOLTAGE 10 3 7 5 4 3 2 4.0 2 3 4 5 7 10 1 101 7 5 4 3 2 VCE(sat) 10 0 7 5 4 3 2 10–1 10 0 IC=75A IC=50A IC=30A 1 Tj=25°C Tj=125°C 0 10 –3 2 3 4 5 7 10 –22 3 4 5 710 –1 2 3 4 5 7 10 0 BASE CURRENT IB (A) IB=100mA Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (µs) 3 2 COLLECTOR CURRENT IC (A) 5 4 2 3 4 5 7 10 2 VBE(sat) VBE (V) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25°C Tj=125°C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 2 VCE=2.5V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 VCE=5.0V 10 4 7 5 4 3 2 VCE (V) SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 1 VCC=300V 7 IB1=150mA 5 IB2=–1.5A 4 3 2 ts 10 0 7 5 4 3 2 10–1 10 0 tf ton Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE 10 1 7 5 4 3 2 160 ts 10 0 7 5 4 3 2 10–1 REVERSE BIAS SAFE OPERATING AREA VCC=300V IB1=150mA IC=75A Tj=25°C Tj=125°C tf COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) 140 100 2 3 45 7 10 1 60 40 20 2 3 45 7 0 10 2 BASE REVERSE CURRENT –IB2 (A) 100 200 300 400 500 600 700 800 VCE (V) DERATING FACTOR OF F. B. S. O. A. 100 SECOND BREAKDOWN AREA tw=50µs D 10 C m s 100µs 5 1m 00 s µs 10 1 7 5 3 2 TC=25°C NON–REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE 80 70 60 COLLECTOR DISSIPATION 50 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 7 10 –22 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) DERATING FACTOR (%) 90 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR CURRENT IC (A) 10 3 7 5 3 2 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA Zth (j–c) (°C/ W) IB2=–3.5A 80 Tj=125°C 10 0 10 2 7 5 3 2 IB2=–2.0A 120 10 2 7 5 4 3 2 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25°C Tj=125°C 10 1 7 5 4 3 2 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TF-HB HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 Tj=25°C Tj=125°C Irr Qrr 10 1 trr (µs) 10 2 7 5 3 2 800 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 0 7 trr 5 VCC=300V 3 IB1=150mA 2 IB2=–1.5A 10 –1 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 2.0 Zth (j–c) (°C/ W) 1.6 1.2 0.8 0.4 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999