MOSFET MODULE SF100BA50 UL;E76102 M SF100BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 100A, VDSS 500V Suitable for high speed switching applications. Low ON resistance. Wide Safe Operating Areas. trr 700ns Applications UPS CVCF , Motor Control, Switching Power Supply, etc. Unit A Maximum Ratings Symbol Tj 25 Item Ratings Conditions Unit SF100BA50 VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage 20 V ID IDP ID Drain Current DC 100 Duty 43% Pulse Reverse Drain Current PT Total Power Dissipation Tj Channel Temperature Tstg Storage Temperature VISO Isolation Voltage R.M.S. Mounting Torque A 200 100 A 600 Tc 25 A.C. 1minute W 40 150 40 125 2500 V Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M5 Recommended Value 1.5 2.5 15 25 2.7 28 N m kgf B 160 g Mass Typical Value Electrical Characteristics Symbol Tj 25 Item Conditions Ratings Min. Typ. Max. Unit IGSS Gate Leakage Current VGS IDSS Zero Gate Voltage Drain Current VGS 0V VDS 500V DSS Darin-Source Breakdown Voltage VGS 0V ID 1mA 500 th Gate-Source Threshold Voltage VDS VGS ID 10mA 1.0 RDS on Drain-Source On-State Resistance ID 50A VGS 15V 70 VDS on Drain-Source On-State Voltage ID 50A VGS 15V 3.5 V V BR VGS 20V VDS 0V 2.0 A 1.0 mA V 5.0 m gfs Forward Transconductance VDS 10A VD 50A Ciss Input Capacitance VGS 0V VDS 25V f 1.0MHz 20000 pF Coss Output Capacitance VGS 0V VDS 25V f 1.0MHz 3800 pF Crss Reverse Transfer Capacitance VGS 0V VDS 25V f 1.0MHz 1500 pF td on Turn-on Delay Time tr td off tf Rise Time Turn-off Delay Time RL 6 RGS 50 ID 50A RG 5 VGS 15V Fall Time 120 s 1100 280 Diode Forward Voltage ID 50A VGS 0V trr Reverse Recovery Time ID 50A VGS 0V di/dt 100A/ s Thermal Resistance S 70 VSDS Rth j-c 13 Switching Time 60 V 1.5 700 V ns 0.21 /W SF100BA50 14 SF100BA50 15