ETC FS30KMJ-06F

MITSUBISHI Nch POWER MOSFET
FS30KMJ-06F
HIGH-SPEED SWITCHING USE
FS30KMJ-06F
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
➁
2.6 ± 0.2
➀➁➂
¡4V DRIVE
¡VDSS .................................................................................. 60V
¡rDS (ON) (MAX) .............................................................. 22mΩ
¡ID ......................................................................................... 30A
¡Integrated Fast Recovery Diode (TYP.) ............. 50ns
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
➀ GATE
➁ DRAIN
➂ SOURCE
➀
➂
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
60
V
VGSS
ID
IDM
IDA
IS
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
VDS = 0V
ISM
PD
Tch
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
±20
30
120
30
30
120
V
A
A
A
A
A
25
–55 ~ +150
–55 ~ +150
W
°C
°C
2000
2.0
V
g
Tstg
Viso
—
Parameter
Isolation voltage
Weight
Conditions
L = 10µH
AC for 1 minute, Terminal to case
Typical value
Mar. 2002
MITSUBISHI Nch POWER MOSFET
FS30KMJ-06F
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
V (BR) GSS
IDSS
Gate-source breakdown voltage
Drain-source leakage current
Gate-source leakage current
IGSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
tf
VSD
Turn-off delay time
Fall time
Source-drain voltage
Rth (ch-c)
trr
Thermal resistance
Reverse recovery time
Test conditions
Limits
Unit
Min.
Typ.
Max.
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VDS = 60V, VGS = 0V
60
±20
—
—
—
—
—
—
100
V
V
µA
VGS = ±20V, VDS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 4V
ID = 15A, VGS = 10V
—
1.0
—
—
—
1.5
18
22
±10
2.0
22
28
µA
V
mΩ
mΩ
—
—
—
—
0.27
38
2600
385
0.33
—
—
—
V
S
pF
pF
—
—
—
—
200
13
70
240
—
—
—
—
pF
ns
ns
ns
—
100
—
ns
—
—
—
1.0
—
50
1.5
5.00
—
V
°C/W
ns
ID = 15A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
IS = 15A, VGS = 0V
Channel to case
IS = 30A, dis/dt = –100A/µs
Mar. 2002