2SK1095 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID 25 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 100 A ——————————————————————————————————————————— Body to drain diode reverse drain current IDR 25 A ——————————————————————————————————————————— Channel dissipation Pch** 30 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at TC = 25 °C 2SK1095 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V * ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.033 0.04 Ω ID = 15 A, VGS = 10 V * ——————— ——————————– 0.05 ID = 15 A, VGS = 4 V * 0.06 ——————————————————————————————————————————— Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V ——————————————————————————————————————————— Input capacitance Ciss — 1400 — pF VDS = 10 V, VGS = 0, ———————————————————————————————— Output capacitance Coss — 720 — pF f = 1 MHz ———————————————————————————————— Reverse transfer capacitance Crss — 220 — pF ——————————————————————————————————————————— Turn-on delay time td(on) — 15 — ns ———————————————————————————————— Rise time tr — 130 — ns ID = 15 A, VGS = 10 V, RL = 2 Ω ———————————————————————————————— Turn-off delay time td(off) — 270 — ns ———————————————————————————————— Fall time tf — 180 — ns ——————————————————————————————————————————— Body to drain diode forward voltage VDF — 1.3 — V IF = 25 A, VGS = 0 ——————————————————————————————————————————— Body to drain diode reverse recovery time trr — 135 — ns IF = 25 A, VGS = 0, diF/dt = 50 A/µs ——————————————————————————————————————————— * Pulse Test See characterist curves of 2SK972. 2SK1095 Power vs. Temperature Derating Maximum Safe Operation Area 10 µs 0 m s 10 s m ) ot = (T C Sh n tio (1 ra 3 µs 1 = pe O 20 is th in ted n i 30 io m at is li (on) r pe ea DS 10 O ar y R b 10 40 100 PW Drain Current ID (A) 500 300 C D 1.0 ) °C 25 Channel Dissipation Pch (W) 60 Ta = 25°C 0.5 Normalized Transient Thermal Impedance γS (t) 0 50 100 Case Temperature TC (°C) 150 1 0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 θch–c(t) = γS(t) · θch–c θch–c = 4.17°C/W, TC = 25°C PDM D = PW T PW T 0.1 0.1 0.05 0.03 0.01 10 µ 0.02 ulse 0.01 hot P S 1 100 µ 1m 10 m Pulse Width PW (s) 100 m 1 10