CPH5516 Ordering number : ENA0196 SANYO Semiconductors DATA SHEET CPH5516 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting. Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--30) 40 V Collector-to-Emitter Voltage VCEO (--) 30 V Emitter-to-Base Voltage VEBO (--) 5 V IC (--) 2 A Collector Current Collector Current (Pulse) ICP Base Current Collector Dissipation IB PC Total Power Dissipation PT Junction Temperature Tj Storage Temperature Tstg PW≤1s (--) 6 A (--) 400 mA Mounted on a ceramic board (600mm2✕0.8mm) 0.9 W Mounted on a ceramic board (600mm2✕0.8mm) 1.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(--) 30V, IE=0A VEB=(--) 4V, IC=0A DC Current Gain Gain-Bandwideth Product hFE fT VCE=(--) 2V, IC=(--) 100mA VCE=(--) 10V, IC=(--) 300mA Output Capacitance Cob VCB=(--) 10V, f=1MHz Marking : EK Ratings min typ max 200 Unit (--) 0.1 µA (--) 0.1 µA 560 (440) 400 MHz (17) 12 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 33106EA MS IM TB-00002176 No. A0196-1/5 CPH5516 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Storage Time Fall Time ton tstg tf Ratings Conditions min IC=(--) 1.5A, IB=(--) 75mA IC=(--) 1.5A, IB=(--) 75mA (--) 0.94 V (--) 30 V (--) 5 V (45) 40 ns See specified Test Circuit. (200) 350 ns See specified Test Circuit. (23) 30 ns 4 3 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) 2 Top view 0.15 0.2 0.6 3 0.05 2.8 1.6 V (--30) 40 IE=(--) 10µA, IC=0A See specified Test Circuit. 5 0.6 1 1 mV (--) 1.2 Electrical Connection 0.4 4 Unit max (--170) 160 (--260) 240 IC=(--) 10µA, IE=0A IC=(--) 1mA, RBE=∞ Package Dimensions unit : mm 7017-009 5 typ 2 0.95 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) 0.7 0.9 0.2 2.9 SANYO : CPH5 Switching Time Test Circuit IB1 PW=20µs D.C.≤1% OUTPUT IB2 INPUT RB VR RL=24Ω 50Ω + 470µF + 100µF VBE= --5V VCC=12V IC=20IB1= --20IB2=500mA For PNP, the polarity is reversed. --2 --15mA 1.8 --10mA --1.4 --8mA --1.2 --6mA --1.0 --4mA --0.8 IC -- VCE 2.0 40mA --5 0 --1.6 0m -30 - --4 [PNP] 0mA --0.6 --2mA --0.4 1.6 1.4 mA 15 30m A Collector Current, IC -- A --1.8 mA Collector Current, IC -- A mA A 50mA IC -- VCE --2.0 A 10m A m 20 [NPN] 8mA 6mA 4mA 1.2 1.0 0.8 2mA 0.6 0.4 --0.2 0.2 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V --1.8 --2.0 IT08907 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 2.0 IT08908 No. A0196-2/5 CPH5516 IC -- VBE --2.00 [PNP] [NPN] VCE=2V 1.75 --0.50 --0.25 1.00 0.75 0.50 0.25 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V IT08909 hFE -- IC [PNP] 1000 0 0.2 0.4 0.6 0.8 [NPN] VCE=2V DC Current Gain, hFE DC Current Gain, hFE 7 5 Ta=75°C 3 25°C 2 --25°C 100 5 Ta=75°C 25°C 3 --25°C 2 100 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 7 0.01 3 2 3 5 7 2 0.1 3 5 7 [PNP] Gain-Bandwidth Product, f T -- MHz 5 3 2 100 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 [NPN] VCE=10V Collector Current, IC -- A 5 3 2 100 7 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A IT08913 Cob -- VCB 7 7 5 0.01 3 [PNP] 3 IT08914 Cob -- VCB 7 f=1MHz 3 IT08912 f T -- IC 1000 VCE= --10V 7 2 1.0 Collector Current, IC -- A IT08911 f T -- IC 1000 5 --0.01 IT08910 hFE -- IC 1000 7 7 --0.01 1.0 Base-to-Emitter Voltage, VBE -- V VCE= --2V Gain-Bandwidth Product, f T -- MHz --25°C --0.75 25°C --25°C Ta=75 °C --1.00 1.25 C --1.25 1.50 25°C --1.50 Ta=75 ° Collector Current, IC -- A --1.75 Collector Current, IC -- A IC -- VBE 2.00 VCE= --2V [NPN] f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 5 5 3 2 3 2 10 7 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Collector-to-Base Voltage, VCB -- V 2 3 5 IT08915 5 0.1 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 3 5 IT08916 No. A0196-3/5 CPH5516 VCE(sat) -- IC [PNP] VCE(sat) -- IC 5 [NPN] IC / IB=20 IC / IB=20 3 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2 --0.1 7 °C 75 5 = Ta 3 5 --2 °C 25 °C 2 2 0.1 7 5 75 = Ta 3 2 °C 25 5°C °C --2 0.01 7 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A Ta= --25°C 75°C 25°C 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A Collector Dissipation, PC -- W µs Collector Current, IC -- A 100 s m s 0µ 50 10 s 0m ion 10 erat op 3 2 0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) For PNP, minus sign is omitted. 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 7 2 1.0 3 IT08918 [NPN] Ta= --25°C 1.0 7 75°C 25°C 5 3 2 3 5 7 2 0.1 3 5 7 PC -- Ta 2 1.0 3 IT08920 [PNP / NPN] Mounted on a ceramic board (600mm2✕0.8mm) 1.2 C D 1.0 7 5 5 2 1.4 s 2 3 Collector Current, IC -- A ICP=6A IC=2A 2 0.1 IC / IB=20 IT08919 1m 3 7 VBE(sat) -- IC 2 0.01 3 Forward Bias A S O 10 7 5 5 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V [PNP] 2 7 3 Collector Current, IC -- A IC / IB=20 --1.0 2 IT08917 VBE(sat) -- IC 3 5 0.01 3 1.0 To t 0.9 al 0.8 di ss 1u nit 0.6 ip ati on 0.4 0.2 0 2 3 5 IT10742 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10743 No. A0196-4/5 CPH5516 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No. A0196-5/5