SEME 1N4149CSM LAB MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL PLANAR DIODE 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) 1.40 (0.055) max. General Purpose and Switching Diode in Hermetic Ceramic Surface Mount Package for High Reliability Applications SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 — Anode PAD 2 — Not Connected PAD 3 — Cathode ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VR Reverse Voltage 100 V VRRM Repetitive Peak Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 150 mA IF Forward Current 200 mA IFRM Repetitive Peak Forward Current 450 mA IFSM Non-Repetitive Peak Forward Current Ptot Power Dissipation at Tamb = 25 °C t = 1µs 2000 t = 1s 500 mA 500 mW Max. Unit IF = 10mA 1 V VR = 20V 25 nA VR = 20V , Tj = 150°C 50 µA CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VF Forward Voltage IR Reverse Current Test Conditions Min. Typ. Reverse Avalanche Breakdown IR = 100µA 100 V Voltage IR = 5µA 100 V Cd Capacitance VR = 0V , f = 1 MHz 4 pF Vfr Forward Recovery Voltage IF = 50mA , tr = 20ns 2.5 V trr Reverse Recovery Time 4 ns V(BR)R Semelab plc. IF = 10mA to IR = 60mA RL = 100Ω Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 10/99