2N2913 2N2915 2N2917 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 3 5 0.74 (0.029) 1.14 (0.045) 6 2 1 45˚ 0.71 (0.028) 0.86 (0.034) TO–77 PACKAGE PIN 1 – Collector 1 PIN 2 – Base 1 PIN 3 – Emitter 1 PIN 4 – Emitter 2 PIN 5 – Base 2 PIN 6 – Collector 2 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage 1 Emitter – Base Voltage Continuous Collector Current Total Device Dissipation PD Total Device Dissipation TSTG TL Storage Temperature Range Lead temperature (Soldering, 10 sec.) TAMB = 25°C Derate above 25°C TC = 25°C Derate above 25°C EACH SIDE TOTAL DEVICE 45V 45V 6V 30 300mW 500mW 1.72mW / °C 2.86W / °C 750mW 1.5W 4.3mW / °C 8.6mW / °C –65 to 200°C 300°C NOTES 1. Base – Emitter Diode Open Circuited. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 9/95 2N2913 2N2915 2N2917 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Test Conditions 1 Parameter Min. Typ. Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS Collector – Base Breakdown Voltage IC = 10mA IE = 0 45 V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA 45 V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA IB = 0 IC = 0 6 ICBO Collector Cut-off Current VCB = 45V IE = 0 10 nA TA = 150°C 10 mA ICEO Collector Cut-off Current VCE = 5V IB = 0 2 IEBO Emitter Cut-off Current VEB = 5V IC = 0 2 V(BR)CBO VCE = 5V hFE DC Current Gain IC = 10mA 60 TA = –55°C 15 IC = 100mA 100 VCE = 5V IC = 1mA 150 0.70 IC = 1mA 0.35 VCE(sat) Collector – Emitter Saturation Voltage IB = 100mA hib Small Signal Common – Base VCB = 5V Input Impedance f = 1kHz Small Signal Common – Base VCB = 5V Output Admittance f = 1kHz Small Signal Common – Base VCE = 5V Current Gain f = 20MHz Common – Base Open Circuit VCB = 5V Output Capacitance f = 140kHz to 1MHz Cobo — IC = 100mA Base – Emitter Voltage |hfe| VCE = 5V nA 240 VCE = 5V VBE hob V IC = 1mA 25 IC = 1mA IC = 500mA V 32 W 1 mmho — 3 IE = 0 pF 6 * Pulse Test: tp = 300ms , d £ 1%. Parameter Test Conditions TRANSISTOR MATCHING CHARACTERISTICS hFE1 Static Forward Current VCE = 5V hFE2 |VBE1 – VBE2| Gain Balance Ratio See Note 2. Base – Emitter Voltage VCE = 5V Differential VCE = 5V |D(VBE1 – VBE2)DTA| IC = 100mA 2N2915 2N2917 Min. Typ. Max. Min. Typ. Max. 0.9 IC = 100mA IC = 10mA to 1mA VCE = 5V IC = 100mA Base – Emitter Voltage TA1 = 25°C TA2 = –55°C Differential Change With VCE = 5V IC = 100mA Temperature TA1 = 25°C TA2 = 125°C 1 0.8 1 3 5 5 10 0.8 1.6 Unit — mV mV 1 2 NOTES 1) Terminals not under test are open circuited under all test conditions. 2) The lower of the two readings is taken as hFE1. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 9/95