SEME-LAB 2N2917

2N2913
2N2915
2N2917
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
DUAL NPN
PLANAR TRANSISTORS IN
TO77 PACKAGE
6.10 (0.240)
6.60 (0.260)
7.75 (0.305)
8.51 (0.335)
12.7 (0.500)
Min.
1.02
(0.040)
Max.
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
4
2.54
(0.100)
3
5
0.74 (0.029)
1.14 (0.045)
6
2
1
45˚
0.71 (0.028)
0.86 (0.034)
TO–77 PACKAGE
PIN 1 – Collector 1
PIN 2 – Base 1
PIN 3 – Emitter 1
PIN 4 – Emitter 2
PIN 5 – Base 2
PIN 6 – Collector 2
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
Collector – Base Voltage
Collector – Emitter Voltage 1
Emitter – Base Voltage
Continuous Collector Current
Total Device Dissipation
PD
Total Device Dissipation
TSTG
TL
Storage Temperature Range
Lead temperature (Soldering, 10 sec.)
TAMB = 25°C
Derate above 25°C
TC = 25°C
Derate above 25°C
EACH SIDE
TOTAL DEVICE
45V
45V
6V
30
300mW
500mW
1.72mW / °C
2.86W / °C
750mW
1.5W
4.3mW / °C
8.6mW / °C
–65 to 200°C
300°C
NOTES
1. Base – Emitter Diode Open Circuited.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 9/95
2N2913
2N2915
2N2917
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Test Conditions 1
Parameter
Min.
Typ.
Max.
Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
Collector – Base Breakdown Voltage
IC = 10mA
IE = 0
45
V(BR)CEO*
Collector – Emitter Breakdown Voltage IC = 10mA
45
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = 10mA
IB = 0
IC = 0
6
ICBO
Collector Cut-off Current
VCB = 45V
IE = 0
10
nA
TA = 150°C
10
mA
ICEO
Collector Cut-off Current
VCE = 5V
IB = 0
2
IEBO
Emitter Cut-off Current
VEB = 5V
IC = 0
2
V(BR)CBO
VCE = 5V
hFE
DC Current Gain
IC = 10mA
60
TA = –55°C
15
IC = 100mA
100
VCE = 5V
IC = 1mA
150
0.70
IC = 1mA
0.35
VCE(sat)
Collector – Emitter Saturation Voltage
IB = 100mA
hib
Small Signal Common – Base
VCB = 5V
Input Impedance
f = 1kHz
Small Signal Common – Base
VCB = 5V
Output Admittance
f = 1kHz
Small Signal Common – Base
VCE = 5V
Current Gain
f = 20MHz
Common – Base Open Circuit
VCB = 5V
Output Capacitance
f = 140kHz to 1MHz
Cobo
—
IC = 100mA
Base – Emitter Voltage
|hfe|
VCE = 5V
nA
240
VCE = 5V
VBE
hob
V
IC = 1mA
25
IC = 1mA
IC = 500mA
V
32
W
1
mmho
—
3
IE = 0
pF
6
* Pulse Test: tp = 300ms , d £ 1%.
Parameter
Test Conditions
TRANSISTOR MATCHING CHARACTERISTICS
hFE1
Static Forward Current VCE = 5V
hFE2
|VBE1 – VBE2|
Gain Balance Ratio
See Note 2.
Base – Emitter Voltage
VCE = 5V
Differential
VCE = 5V
|D(VBE1 – VBE2)DTA|
IC = 100mA
2N2915
2N2917
Min. Typ. Max. Min. Typ. Max.
0.9
IC = 100mA
IC = 10mA to 1mA
VCE = 5V
IC = 100mA
Base – Emitter Voltage
TA1 = 25°C
TA2 = –55°C
Differential Change With
VCE = 5V
IC = 100mA
Temperature
TA1 = 25°C
TA2 = 125°C
1
0.8
1
3
5
5
10
0.8
1.6
Unit
—
mV
mV
1
2
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as hFE1.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 9/95