2N2920DCSM DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 3 1 4 A 6 5 0.23 rad. (0.009) FEATURES 4.32 ± 0.13 (0.170 ± 0.005) 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS 6.22 ± 0.13 (0.245 ± 0.005) A= 1.27 ± 0.13 (0.05 ± 0.005) LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 4 – Collector 2 PAD 2 – Base 1 PAD 5 – Emitter 2 PAD 3 – Base 2 PAD 6 – Emitter 1 APPLICATIONS: Suitable for use in general purpose differential amplifier applications. ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TSTG Collector – Base Voltage Collector – Emitter Voltage 1 Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 25°C Storage Temperature Range EACH SIDE TOTAL DEVICE 60V 60V 5V 50mA 300mW 500mW 1.72mW / °C 2.86mW / °C –65 to 200°C NOTES 1. Base – Emitter Diode Open Circuited. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim.4/98 2N2920DCSM ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions 1 Min. Typ. Max. Unit INDIVIDUAL TRANSISTOR CHARACTERISTICS Collector – Base Breakdown Voltage IC = –10µA IE = 0 60 V(BR)CEO* Collector – Emitter Breakdown Voltage IC = –10mA IB = 0 60 V(BR)EBO Emitter – Base Breakdown Voltage IE = –10µA IC = 0 5 ICBO Collector Cut-off Current VCB = –50V IE = 0 10 nA TA = 150°C 10 µA IEBO Emitter Cut-off Current VEB = –4V IC = 0 20 nA IC = 10µA VCE = 5V 100 IC = –100µA VCE = 5V 150 TA = –55°C 75 IC = –500µA VCE = –5V 150 450 IC = –1mA VCE = –5V 150 450 IC = –10mA VCE = –5V * 125 IC = –100µA VCE = –5V –0.7 IB = –10µA IC = –100µA –0.7 IB = –100µA IC = –1mA –0.8 IB = –10µA IC = –100µA –0.2 IB = –100µA IC = –1mA –0.25 V(BR)CBO hFE VBE DC Current Gain Base – Emitter Voltage VCE(sat) Collector – Emitter Saturation Voltage hie Small Signal Common – Emitter Input Impedance hfe Small Signal Common – Emitter Current Gain hre Small Signal Common – Emitter Reverse Voltage Gain hoe Small Signal Common – Emitter 30 150 600 V V kΩ — 25 x 10 -4 f = 1kHz 5 Small Signal Common – Emitter f = 30MHz Current Gain VCE = –5V IC = –500µA IC = –1mA f = 100MHz Cibo 3 — IC = –1mA VCE = –5V Cobo 450 VCE = –10V Output Admittance |hfe| V Common – Base Open Circuit VCB = –5V Output Capacitance f = 100kHz Common – Base Open Circuit VEB = –0.5V Input Capacitance f = 100kHz IE = 0 IC = 0 60 µmho 1 — 1 5 4 pF 8 NOTES * Pulse Test: tp = 300µs, δ ≤ 2%. 1) Terminals not under test are open circuited under all test conditions. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim.4/98 2N2920DCSM ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions TRANSISTOR MATCHING CHARACTERISTICS Static Forward Current Gain VCE = –5V hFE1 hFE2 Balance Ratio |VBE1 – VBE2| Base – Emitter Voltage Differential |∆(VBE1 – VBE2)∆TA| Base – Emitter Voltage Differential IC = –100µA See Note 2. Min. Typ. 0.9 1 VCE = –5V 5 IC = –10µA to –10mA VCE = –5V IC = –100µA VCE = –5V IC = –100µA TA1 = 25°C TA2 = –55°C VCE = –5V IC = –100µA TA1 = 25°C TA2 = 125°C Max. Unit — mV 3 0.8 mV 1 OPERATING CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter Test Conditions 1 INDIVIDUAL TRANSISTOR CHARACTERISTICS VCE = –10V RG = 3kΩ Min. Typ. Max. Unit IC = –100µA f = 100Hz 7 Noise Bandwidth = 20Hz F Spot Noise Figure VCE = –10V IC = –100µA RG = 3kΩ f = 1kHz 3 dB Noise Bandwidth = 200Hz VCE = –10V IC = –100µA RG = 3kΩ f = 10kHz 2.5 Noise Bandwidth = 2kHz VCE = –10V _ F Average Noise Figure IC = –100µA RG = 3kΩ Noise Bandwidth = 15.7kHz 3.5 dB See Note 3. NOTES 1) Terminals not under test are open circuited under all test conditions. 2) The lower of the two readings is taken as hFE1. 3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency rolloff of 6dB / octave. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim.4/98 2N2920DCSM THERMAL INFORMATION PT M axim um Continuous D issipation (W ) 0.8 0.7 0.6 0.5 TO TA L D EVIC E 0.4 EAC H TR AN SISTO R 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175 200 TA Free Air Temperature (˚C) Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim.4/98