BSX20 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON EPITAXIAL TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) ) ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 3 . 5 4 1 2 .7 (0 .5 0 0 ) m in . 3 . ) 0 0 APPLICATIONS 5 . . 0 .4 8 (0 .0 1 9 ) 0 .4 1 (0 .0 1 6 ) d ia . n i 0 ( m 7 . • The BSX20 is a silicon planar epitaxial NPN transistor 2 1 in a TO-18 (TO-206AA) metal case. They are primarily intended for very high speed saturated switching applications 2 .5 4 (0 .1 0 0 ) N o m . ! TO18 (TO-206AA) PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC Ptot Rθj-c Rθj-a Tj Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage(IB = 0) Emitter – Base Voltage (IC = 0) Collector Current (t = 10µs) Total Power Dissipation Tamb ≤ 25°C Tcase ≤ 25°C Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient Maximum Operating Junction Temperature Storage Temperature 40V 15V 4.5V 0.5A 0.36W 1.2W 146°C/W 486°C/W 200°C -65 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document. 3392 Issue 1 BSX20 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICES Collector Cut–off Current ICBO Collector Cut–off Current Test Conditions VCE = 40V VCE = 15V VCB = 20V VCB = 20V V(BR)CEO* Collector– Emitter Breakdown Voltage VCER (sus)* Collector - Emitter Sustaining Voltage VBE = 0 Tamb = 55°C IE = 0 Tamb = 150°C Max. Unit 1 µA 0.4 µA 0.4 µA 30 µA IC = 10mA 15 V IB = 0 IC = 10mA 20 V IB = 1mA 0.25 IC = 100mA IB = 10mA 0.6 IC = 10mA IB = 0.3mA 0.3 Base – Emitter IC = 10mA IB = 1mA Saturation Voltage IC = 100mA IB = 10mA Base – Emitter On Voltage IC = 30µA VCE = 20V Voltage VBE(on)* Typ. (RBE = 10Ω) IC = 10mA VCE (sat)* Collector – Emitter Saturation VBE(sat)* Min. 0.7 0.85 V V 1.5 mV 350 Tamb = 100°C hFE* DC Current Gain IC = 10mA VCE = 1V 40 IC = 100mA VCE = 2V 20 IC = 10mA VCE = 1V 20 500 60 — Tamb = -55°C fT Transition Frequency IC = 10mA VCE = 10V CEBO Emitter – Base IC = 0 VEB = 1V 4.5 IE = 0 VCB = 5V 4 pF Storage Time IC = 10mA VCC = 10V 13 ns Turn-on Time IB1 = -IB2 = 10mA IC = 10mA VCC = 3V MHz 600 Capacitance CCBO Collector – Base Capacitance ts ton 6 12 IB1 = 3mA VCC = 6V 7 IC = 10mA VCE = 3V 18 IB1 = 3mA IB2 = -1.5mA IC = 100mA VCE = 6V IB1 = 40mA IB2 = -20mA IC = 100mA ns IB1 = 40mA toff Turn-off Time 21 ns *Pulsed: pulse duration = 300µs, duty cycle = 1% Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document. 3392 Issue 1