BYV32–50M0 BYV32–100M BYV32–150M BYV32–200M MECHANICAL DATA Dimensions in mm 4.6 0.8 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 1 3 .5 16.5 3.6 Dia. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 1 3 .7 0 3 .6 0 (0 .1 4 2 ) M a x . 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 1 23 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 0.6 HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI–REL APPLICATIONS 2 • STANDARD (COMMON CATHODE) • COMMON ANODE • SERIES CONNECTION 9 .6 9 .3 1 1 .5 1 1 .2 1.0 2 .5 4 BSC 2. 70 BSC 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • HERMETIC TO220 METAL OR CERAMIC SURFACE MOUNT PACKAGE SMD1 CERAMIC SURFACE MOUNT TO220 METAL FEATURES • SCREENING OPTIONS AVAILABLE • ALL LEADS IOLATED FROM CASE ELECTRICAL CONNECTIONS Common Cathode Common Anode BYV32-xxxM Series Connection BYV32-xxxAM BYV32-xxxRM • AVERAGE CURRENT 20A • VERY LOW REVERSE RECOVERY TIME – trr = 35ns • VOLTAGE RANGE 50 TO 200V 1 = A1 Anode 1 1 = K1 Cathode 1 1 = K1 Cathode 1 2 = K Cathode 2 = A Anode 2 = Centre Tap 3 = A2 Anode 2 3 = K2 Cathode 2 3 = A2 Anode • VERY LOW SWITCHING LOSSES Applications include secondary rectification in high frequency switching power supplies. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BYV32 –50M 50V BYV32 –100M 100V BYV32 –150M 150V BYV32 –200M 200V VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage 50V 100V 150V 200V VR Continuous Reverse Voltage 50V 100V 150V 200V IFRM Repetitive Peak Forward Current tp = 10ms 200A IF(AV) Average Forward Current Tcase = 70°C 20A (switching operation, d = 0.5, both diodes conducting) IFSM Surge Non Repetitive Forward Current Tstg Storage Temperature Range Tj Maximum Operating Junction Temperature Semelab plc. tp = 10 ms Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 80A –65 to 200°C 200°C Prelim. 7/00 BYV32–50M0 BYV32–100M BYV32–150M BYV32–200M ELECTRICAL CHARACTERISTICS (Per Diode) (Tcase = 25°C unless otherwise stated) Parameter IR VF * trr Reverse Current Forward Voltage Reverse Recovery Time Test Conditions Min. Typ. Max. Unit VR = VRWM Tj = 25°C 30 mA VR = VRWM Tj = 100°C 0.6 mA IF = 8A TC = 25°C 1.1 IF = 20A TC = 25°C 1.5 IF = 5A TC = 100°C 0.95 IF = 2A VR = 30V di / dt = 20A/ms IF = 1A VR = 30V di / dt = 50A/ms IF = 2A Qrr Recovered Charge VFP Forward Recovery Overvoltage di / dt = 10A/ms VR = 30V di / dt = 20A/ms IF = 1A V 35 ns 50 ns 15 nC V 1.0 * Pulse Test: tp £ 300ms, duty cycle £ 2%. THERMAL CHARACTERISTICS (TO220 METAL CASE) RqJC† Thermal Resistance Junction – Case 1.6 °C/W † Both diodes conducting. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 7/00