TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C (2 pls) 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K • SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R PIN 2 PIN 4 DRAIN 1 GATE 2 • LOW Crss • SIMPLE BIAS CIRCUITS Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 438W 70V ±20V 30A –65 to 150°C 200°C Prelim. 2/00 D1027UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current ID = 100mA VDS = 28V VGS = 0 6 mA 1 mA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 6A ID = 10mA VDS = VGS VGS(th)match Gate Threshold Voltage Matching Between Sides V VGS = 0 70 1 mhos 4.8 0.1 V TOTAL DEVICE Common Source Power Gain h PO = 150W Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 175MHz GPS IDQ = 2.4A 13 dB 50 % 20:1 — PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 360 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 180 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 15 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 0.4°C / W Prelim. 2/00 D1027UK 400 100 400 350 90 350 300 80 300 250 70 200 60 P out f = 175MHz 100 18 Vds = 28V P out Gain 200 % 150 f = 175MHz Idq = 2A 250 Drain Efficiency W 20 16 dB W 50 150 40 100 30 50 20 20 0 14 Idq = 2A 50 Vds = 28V 0 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 12 20 18 P in W P in W 2nd harmonic = -28dBc Pout Drain Efficiency Pout Gain Figure 1 – Power Output and Efficiency vs. Power Input. 3rd harmonic = -40dBc output at 350W Figure 2 – Power Output & Gain vs. Power Input. -20 -20 18.5 -30 17.5 -30 IMD IMD -40 Gain dBc dBc dB -40 16.5 -50 -50 -60 20 40 60 80 100 Pout W PEP IMD3 at Idq=1.5A IMD3 at Idq=2.5A 120 140 160 180 0 0.5 1 1.5 Idq A f1 = 175.0 MHz IMD3 IMD5 Gain f2 = 175.1 MHz VDS = 28V 15.5 2.5 2 f1 = 175.0MHz f2 = 175.1MHz Pout = 130W PEP Vds = 28V Figure 3 – IMD vs. Output Power. Semelab plc. Figure 4 – IMD & Gain vs. Idq Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 2/00 D1027UK 110 100 90 80 70 60 0 12 50 30 15 0 40 14 0 0 13 10 5 2 1 0.5 180 0 0 0.2 10 170 20 160 0 50 2 1 0.5 0.2 180 ZLopt -30 0 -15 -20 -160 225 -10 -170 175 -4 0 40 -1 Impedance measured Drain - Drain 0 -5 -1 30 -80 -90 -100 -110 -12 0 Semelab plc. jX -0.5 -4 -5 -70 ZL R 4 4.5 3.5 -60 f MHz 175 200 225 Matching Network Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Z Lopt Prelim. 2/00 D1027UK 110 100 90 80 70 60 0 12 50 30 15 0 40 14 0 0 13 10 5 2 1 0.5 180 200 225 ZSopt -60 -70 -80 -90 -100 -110 -12 0 Semelab plc. -1 30 ZS opt -4 0 40 -1 Impedance measured Gate - Gate 0 -5 Matching Network -30 0 -15 -20 -160 -10 -170 0 0 175 0.2 10 170 20 160 0 50 2 1 0.5 0.2 180 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk f MHz 175 200 225 Zs R 1.6 1.6 2.3 jX -1.5 -1.2 -2 Prelim. 2/00 D1027UK L 2 1 0 k G a te - B ia s 1 0 0 n 1 n T 2 2 8 V 1 0 0 n 1 2 1 1 0 0 k 1 0 0 0 u L 1 1 n 8 2 0 K T 4 D 1 0 2 7 U K 6 8 0 p F T 6 1 u T 1 9 0 p F 2 -1 8 p F 4 7 p F 2 -1 8 p F 6 8 0 p F 1 u T 5 T 3 D 1 0 2 7 U K D1027UK 175MHz TEST FIXTURE T1,2,3 T4,5 T6 L1 L2 Semelab plc. 7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens A1 x 1 2-hole core. 14cm Storm Products EXE18 19/30 S1TW coaxial cable. 11cm Storm Products EXE18 19/30 S1TW coaxial cable 6 turns 1.2mm dia wire, 5mm internal diameter 1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 2/00