TetraFET D2004UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL A C B (2 pls) K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 • VERY LOW Crss PIN 3 DRAIN 2 GATE 2 • SIMPLE BIAS CIRCUITS PIN 5 GATE 1 PIN 4 • LOW NOISE DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 58W 65V ±20V 2A –65 to 150°C 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 01/01 D2004UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS Drain–Source V VGS = 0 ID = 10mA VDS = 28V VGS = 0 0.4 mA VGS = 20V VDS = 0 1 mA VGS(th) Gate Threshold Voltage * ID = 10mA VDS = VGS 7 V gfs VDS = 10V ID = 0.4A IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * 65 1 0.36 S 10 dB 40 % 20:1 — TOTAL DEVICE GPS Common Source Power Gain Drain Efficiency VSWR Load Mismatch Tolerance h VDS = 28V IDQ = 0.4A f = 1GHz PER SIDE Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance * Pulse Test: PO = 10W VDS = 0V VGS = –5V f = 1MHz 24 pF VDS = 28V VGS = 0 f = 1MHz 12 pF VDS = 28V VGS = 0 f = 1MHz 1 pF Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 3.0°C / W Prelim. 01/01 D2004UK 3RXW : I ,GT 9GV *+] $ 9 3LQ: *DLQ 3RXW G% : I ,GT 9GV *+] $ 9 3LQ: 3RXW *DLQ 'UDLQ(IILFLHQF\ 3RXW 'UDLQ(IILFLHQF\ Figure 1 Figure 2 Output Power and Gain vs. Input Power Output Power and Efficiency vs. Input Power. OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz ZS ZL 1000MHZ 2.4 - j2.5 5 + j1 W W N.B. Impedances measured terminal to terminal. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 01/01 D2004UK 1 0 + 2 8 V 1 K 2 G a te -B ia s 1 n F 1 0 0 n F 1 n F 1 K 2 L 1 T 4 T 5 1 0 0 n F T 1 2 T 1 3 L 2 T 1 1 T 6 T 1 1 -8 p F 8 .2 p F 1 0 p F 2 .2 p F T 1 4 3 6 p F T 2 1 -8 p F 1 0 0 u F 1 K 2 D 2 0 0 4 U K 3 6 p F T 3 L 3 3 .6 p F T 1 9 1 -8 p F 3 6 p F 3 6 p F T 7 T 8 T 9 T 1 0 D 2 0 0 4 U K T 1 5 T 1 6 T 1 7 T 1 8 1000MHz TEST FIXTURE Substrate 0.8mm thick PTFE/glass All microstrip lines W = 2.7mm T1 T2, T19 T3, T7 T4, T8 T5, T9 T6, T10 T11,T15 T12,T16 T13,T17 T14,T18 23 mm 50mm 50 OHM UT 34 semi-rigid coax 6mm 8mm 15mm 9mm 8mm 7mm 11mm 5mm L1,L2 L3 6 turns of 24swg enamelled copper wire, 3mm i.d. 1.5 turns of 24swg enamelled copper wire on Siemens B62152-a7x 2 hole core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 01/01