TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULL A C B (2 pls) K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 • LOW Crss PIN 3 DRAIN 2 GATE 2 • SIMPLE BIAS CIRCUITS PIN 5 GATE 1 PIN 4 • LOW NOISE DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 175W 70V ±20V 10A –65 to 150°C 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 9/99 D1008UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS Drain–Source V VGS = 0 ID = 100mA VDS = 28V VGS = 0 2 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage * ID = 10mA VDS = VGS 7 V gfs VDS = 10V ID = 2A IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * 70 1 1.6 S 13 dB 50 % 20:1 — TOTAL DEVICE GPS Common Source Power Gain PO = 80W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 400MHz IDQ = 0.4A PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 120 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 60 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Max. 1.0°C / W 9/99 D1008UK 125 100 125 100 80 100 17 15 f1 = 400.0MHz P out W 75 60 50 40 f1 = 400MHz P out Drain Efficiency % W Idq = 0.4A 75 13 VDS = 28V 50 11 25 9 Gain dB Idq = 0.4A VDS = 28V 25 0 0 4 8 20 12 0 20 16 0 0 4 8 Pout Drain Efficiency P in W 12 P in W Figure 1 – Power Output and Efficiency vs. Power Input. 16 7 20 Pout Gain Figure 2 – Power Output & Gain vs. Power Input. -15 -20 D1008UK -25 IMD3 dBc OPTIMUM SOURCE AND LOAD IMPEDANCE -30 -35 f2 = 400.1MHz VDS = 28V IDQ = 0.8A -45 -50 Frequency MHz 400 f1 = 400.0MHz -40 0 20 40 60 ZS ZL Ω Ω 1.5 + j0.2 5.0 + j2.0 80 P out W PEP Figure 3 – IMD vs. Output Power. Typical S Parameters ! # !Freq MHz 100 200 300 400 500 600 700 800 900 1000 Semelab plc. Vds=28V, Idq=1A MHz S MA R 50 S11 mag 0.794 0.881 0.923 0.923 0.937 0.952 0.966 0.966 0.977 0.966 ang -158 -167 -171 -176 -179 177 174 171 167 165 S21 mag 14.622 5.821 3.02 1.82 1.439 1.057 0.676 0.543 0.447 0.359 ang 69 42 28 18 15 13 10 5 1 1 S12 mag 0.0115 0.0061 0.0068 0.117 0.0168 0.0234 0.0285 0.0335 0.0394 0.0432 ang -7 3 60 77 76 75 74 69 64 64 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] S22 mag 0.61 0.794 0.871 0.902 0.923 0.945 0.966 0.955 0.966 0.955 ang -145 -156 -162 -167 -169 -171 -174 -177 178 178 9/99 D1008UK L4 GATE BIAS 1nF 6.8K +28V 100K 1nF 6 x 3.5mm contact pad 100pF 6 x 3.5mm contact pad 10Ω 6.8K 1nF L3 T4 T2 100uF OUTPUT 100pF T1 T6 D1008 INPUT L1 T3 1-3.5pF 2-18pF T5 L2 D1008 100pF 6 x 3.5mm contact pad 100pF 6 x 3.5mm contact pad D1008UK TEST FIXTURE Substrate 1.6mm PTFE/glass, Er=2.5 All microstrip lines W=4.4mm T1 T2,T3 T4,T5 T6 70mm 85mm 100mm 70mm 50Ω 25Ω 15Ω 50Ω Semelab plc. UT34 SEMI RIGID COAX UT70-25 SEMI RIGID COAX UT85-15 SEMI RIGID COAX UT85 SEMI RIGID COAX L1 L2 L3 L4 3.5 turns of 24swg ECW, 3mm ID 5.5 turns of 24swg ECW, 4mm ID 4 turns of 21swg ECW, 7mm ID 3 turns of 21swg ECW on Fair-Rite FT50-75 core Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 9/99