IRFM1310ST MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 2 6 .4 2 (1 .0 4 0 ) 2 0 .0 7 (0 .7 9 0 ) 6 .3 5 (0 .2 5 0 ) VDSS ID(cont) RDS(on) 1 2 .7 (0 .5 0 0 ) m in . 1 3 .7 2 (0 .5 4 0 ) 1 3 .7 2 (0 .5 4 0 ) 1 .0 2 (0 .0 4 0 ) 3 .8 1 (0 .1 5 0 ) 2 p lc s . FEATURES 6 .6 0 (0 .2 6 0 ) 3 .8 1 (0 .1 5 0 ) 100V 34A 0.070W • REPETITIVE AVALANCHE RATING • ISOLATED AND HERMETICALLY SEALED • EASE OF PARALLELING TO–254Z – Package • SIMPLE DRIVE REQUIREMENTS Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC RqJCS RqJCA Gate – Source Voltage Continuous Drain Current (VGS = 10V , Tcase = 25°C) Continuous Drain Current (VGS = 10V , Tcase = 100°C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Case to Sink(Typical) Thermal Resistance Junction-to-Ambient ±20V 34A 21A 136A 150W 1.2W/°C –55 to 150°C 0.83°C/W 0.21°C/W 48°C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 200mH , RG = 25W , Peak IL = 34A , Starting TJ = 25°C 3) @ ISD £ 34A , di/dt £ 70A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 02/00 IRFM1310ST ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain – Source On–State VGS = 0 ID = 250mA Min. Typ. Max. V 100 Reference to 25°C V / °C 0.13 ID = 1mA 0.060 W 4 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA VGS = 10V ID = 21A VGS(th) Gate Threshold Voltage VDS = VGS ID = 250mA 2 gfs Forward Transconductance VDS ³ 15V IDS = 21A 11 IDSS Zero Gate Voltage Drain Current VGS = 0 IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1900 Coss Output Capacitance VDS = 25V 450 Crss Reverse Transfer Capacitance f = 1MHz 230 Qg Drain to Case Capacitance Qgs Total Gate Charge ID = 34A 15 Qgd Gate – Source Charge VDS = 80V 58 td(on) Gate – Drain (“Miller”) Charge tr Turn–On Delay Time td(off) Rise Time tf Turn–Off Delay Time IS Fall Time – DRAIN DIODE CHARACTERISTICS SOURCE Continuous Source Current Resistance VGS = 10V ID = 22A nA pF 110 VDS = 80V nC 11 VDD = 50V 56 ID = 22A ns 45 RG = 3.6W 40 34 2 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IF = 22A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V ton Forward Turn–On Time 136 IS = 22A Unit TJ = 25°C 1.6 V 180 270 ns 1.2 1.8 mC VGS = 0 TJ = 25°C A Negligible Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 02/00