IRFE9130 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 1.39 (0.055) 1.15 (0.045) 4 VDSS ID(cont) RDS(on) 0.76 (0.030) 0.51 (0.020) 0.33 (0.013) Rad. 0.08 (0.003) 3 1.65 (0.065) 1.40 (0.055) 0.43 (0.017) 0.18 (0.007 Rad. -100V -6.1A Ω 0.345Ω FEATURES • SURFACE MOUNT • SMALL FOOTPRINT LCC4 • HERMETICALLY SEALED MOSFET TRANSISTOR PINS GATE DRAIN SOURCE BASE COLLECTOR EMITTER 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 • DYNAMIC dv/dt RATING • AVALANCHE ENERGY RATING • SIMPLE DRIVE REQUIREMENTS • LIGHT WEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C – 6.1A ID Continuous Drain Current @ Tcase = 100°C – 3.8A IDM Pulsed Drain Current – 24A PD Power Dissipation @ Tcase = 25°C 22W Linear Derating Factor EAS Single Pulse Avalanche Energy 2 dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range 0.17W/°C 92mJ – 5.5V/ns – 55 to +150°C Surface Temperature ( for 5 sec). Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 300°C 10/98 IRFE9130 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate – Source Leakage Reverse Gate – Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Test Conditions VGS = 0 ID = –1mA Reference to 25°C ID = –1mA VGS = –10V ID = –3.8A VGS = –10V ID = –6.1A VDS = VGS ID = –250mA VDS ≥ –15V IDS = –3.8A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = –20V VGS = 20V VGS = 0 VDS = –25V f = 1MHz VGS = –10V ID = –6.1A VDS = 0.5BVDSS Min. Typ. V / °C – 0.10 0.30 0.345 –4 –2 2.5 – 25 – 250 – 100 100 800 350 125 14.7 1.0 2.0 VDD = –50V ID = –6.1A RG = 7.5Ω Negligible LD LS PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) 1.8 4.3 RθJC RθJPC THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Junction – PC Board Ω V S (É) µA nA pF 38.4 7.1 21 60 140 140 140 trr Qrr ton VSD Unit V –100 SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = –1.6A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = –6.1A TJ = 25°C 1 Reverse Recovery Charge di / dt ≤ –100A/µs VDD ≤ –50V Forward Turn–On Time IS ISM Max. nC ns –1.6 –24 A –4.7 V 250 3.0 ns µC nH 5.8 19 °C/W Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk 10/98